memory card and usb drive SSD

What is NAND Flash Memory and How it works

What is Flash memory

Flash memory is the core of storage for solid-state drives, USB drives, and memory cards. It can typically store hundreds of gigabytes of data in a space the size of a fingernail. It is an invention that is as renowned as the Nobel Prize. Flash memory storage relies on floating-gate MOSFETs. Before discussing floating-gate transistors, let’s briefly introduce MOSFETs, as floating-gate transistors are an improvement based on MOSFETs. The principle of MOSFETs is quite understandable. These three black areas are metal conductors, and the n-type semiconductors on both sides contain many free electrons. If we apply electricity to the n-type semiconductors, they can conduct, acting like a piece of wire. The p-type semiconductor in the middle has very few free electrons, so when we apply voltage to the base, it is cut off because the concentration of free electrons in the p-region is too low to form a conductive channel.
memory card and usb drive SSD
To make the MOSFET conduct, we can apply a voltage to its gate, attracting the electrons in the p-region towards the gate.
Because there is a layer of silicon dioxide between the gate and the p-region, which is insulating, free electrons cannot pass through under normal circumstances. So, when we apply voltage to the gate, the free electrons in the p-region gather near the insulating layer, forming a conductive channel, and thus it conducts.

Floating-gate mosfets

However, when we remove the gate voltage, the electrons gathered near the insulating layer disperse, and no conductive channel is formed. Since no current flows, the MOSFET is cut off at this time. This is the circuit symbol for a MOSFET. Simply put, when we apply a high voltage to its gate, it will conduct, and when we apply a low voltage, it will be cut off.

Floating-gate MOSFETs are very similar to MOSFETs, except for an additional bar in the middle, which represents the floating gate. Since they are both MOSFETs, their structures are similar. A floating-gate MOSFET has an additional conductive floating gate layer added to the oxide layer of a MOSFET, allowing it to store information. Let’s talk about how to write information first. If we apply a high voltage of 20 volts to the gate and 0 volts to the substrate, some of the free electrons in the channel will be attracted to the floating gate layer. Even if we then power off, the free electrons will still be stored in the floating gate layer because the floating gate layer is insulated by silicon dioxide layers above and below, and the free electrons simply cannot escape. This is how information is stored, with the charge stored being considered a logical zero.There is also a question about how electrons can pass through the tunnel oxide layer, which is also an insulating layer. This is actually due to the tunneling effect. For example, a silicon dioxide oxide layer is normally insulating, but if we apply a voltage large enough, greater than 10 million volts per centimeter, electrons can pass through this insulating layer. This is the tunneling effect. When we apply a 20V high voltage to the gate, due to the thinness of the tunnel layer and the high voltage per unit thickness it withstands, electrons from the p-region are attracted. It is important to note that at this time, do not apply voltage to the drain, or a sub-threshold conduction channel will form, and electrons will flow in this manner, which would hinder the occurrence of the tunneling effect.

When we apply a low voltage of 10 volts, electrons cannot pass through the insulating layer, just like a conventional MOSFET. Understanding the principle of flash memory writing makes it easy to understand its parameter principle. We just need to apply a high voltage of 20 volts to its substrate while applying 0V to the gate. At this time, the free electrons imprisoned in the floating gate layer will be attracted out, and the data will be erased. Erasing is writing a logical one. Storing one bit of information requires only one floating-gate MOSFET. To store 1GB of information, at least 8.5 billion floating-gate transistors are needed. How do we control so much information?

How does nand flash work​

You can see this is a flash memory block that can store 16 bits of information. The middle ones are floating-gate MOSFETs that store information. The top and bottom ones are conventional MOSFETs that play a controlling role here. The horizontal ones are its word lines, connecting the gates of these rows of MOSFETs. The vertical ones are its bit lines. Its writing minimum unit is a page. A page is a row. When we want to write, we first need to erase all the data in this entire block, which means releasing the electrons stored in the floating gate layer, and all storage units will become logical ones.

How do we write by page? For example, if we want to write the page “word1,” we need to apply 20 volts of high voltage to the radiation MOSFETs of this page, and other MOSFETs should not be given high voltage. In this way, only the data of this page with 20 volts of high voltage can possibly be written. If we want to store a charge and write 0, we write 0 to its corresponding bit line, so free electrons will be attracted to the floating gate layer, and this bit will be written as logical 0. If we want to write 1, it’s very simple because we need to erase before writing, and after erasing, the data is all 1. We just need to keep the data unchanged. For example, if we want to write 1 to this bit, we write a high voltage to its bit line, which will hinder the tunneling effect. So, free electrons will not be captured by the floating gate layer, and it will remain logical one unchanged. The minimum unit for writing data is a page of data, and the minimum unit for erasing data is to erase the entire block. We need to give all of them zero volts and then apply a high voltage of 20 volts to the substrate.

You might be curious why the minimum unit for erasing is an entire block of data. Look at its cross-section, and you will understand. All storage units of this flash memory share a substrate. Just by applying a high voltage of 20 volts to the substrate, the operation of erasing the entire block of data can be completed. The minimum writing unit is a page because the gates of the MOSFETs on this page are connected together. This block of data can store 16 bits of data. One page is 4 bits of data, and a real flash memory page has 65,536 storage units per block. There are 512 pages in the data, so a block of flash memory data can store more than 33 million data points. This is what we call 4MB of data. Even if we want to write one bit of data, we also have to erase these more than 33 million bits of data before we can write.A block of data is 4MB, and to make up 1GB, you would need 256 flash memory blocks. The packaging size of the chip is standardized. To package enough storage units within the chip, the storage units must be made small enough to fit more of them in. However, as they are downsized, many issues arise. For instance, the tunnel oxide layer also becomes thinner. Due to the process of erasing and writing, electrons need to pass through the oxide layer repeatedly. If this happens too many times, the tunnel oxide layer can become damaged and fail to block the electrons, leading to data not being well preserved.

What is 3d nand flash​


To address this issue, humans invented 3D NAND flash, which eliminates the need to increase the number of storage units by downsizing MOSFETs. This is a 4-layer flash that stands the conductive channels upright, with horizontal pages of data. This area represents a block of data, and the middle contains all its storage units. So far, 3D NAND flash memory has achieved a stack of 232 layers, with a storage density of about 15GB per square millimeter. By using 3D stacking, not only can the unit capacity be increased several times, but also, because of the three-dimensional technology, the size of the storage units does not need to be reduced. As a result, the number of write-erase cycles is increased by more than tenfold. This is my understanding of flash memory technology, and I hope it helps your comprehension.

The Rise of Yangtze Memory: Lurking, Accumulating, Breaking Through

Starting Point:

Survival in the Cracks – The Beginning of Domestic Storage

In the storage industry, high technical barriers, large capital investments, and long R&D cycles have always been the three core thresholds restricting new players.Since the 1980s, the memory chip market has gradually formed a “tripolar pattern”: Samsung, SK Hynix, and Micron have occupied the main share, firmly controlling the core technology and market pricing power of memory chip manufacturing. Samsung’s 3D NAND, SK Hynix’s LPDDR, and Micron’s enterprise-level SSD solutions have monopolized the upstream and downstream of the consumer and enterprise markets in China.Faced with the monopoly of international giants, the difficulties faced by domestic storage in the initial stage can be summarized as “lacking technology, lacking talent, lacking funds, and lacking trust”.

Lacking Technology: In the field of memory chip design and manufacturing, domestic enterprises started late, and in the early stage, they were mostly concentrated in the low-end market, lacking advanced process and product design capabilities. The lack of technological accumulation made domestic manufacturers unable to compete with international giants like Samsung in the mainstream market.

Lacking Talent: The core technology R&D of the memory chip industry requires a large number of high-end talents, and at that time, China’s technical reserves and educational resources in the semiconductor field were still unable to meet the demand.

Lacking Funds: The R&D and mass production of memory chips require huge capital support, and the R&D investment of international giants is often dozens or even hundreds of times that of domestic enterprises. Samsung’s R&D investment in the storage field exceeds 10 billion US dollars every year, while the R&D budget of domestic manufacturers is only a fraction of it. At the same time, the memory chip industry has a significant economies of scale effect, and domestic enterprises with insufficient production capacity face great challenges in cost control and market competitiveness.

Lacking Trust: In the early market promotion, domestic storage brands were often regarded as low-end substitutes by consumers. Due to limited technical capabilities, the performance, stability, and durability of early products were significantly different from international brands. This brand trust crisis further restricted the breakthrough of domestic manufacturers in the high-end market.

Most early domestic SSDs relied on imported chips for packaging and production, with representative manufacturers such as Galaxy, Team, and Maxsun. Their products were often labeled as “low-end substitutes”. In early user feedback, domestic SSDs were “full of problems”.

Short Life: The early versions of flash memory particles had unstable life, often damaged after two or three years of use.

Poor Performance: Limited by the optimization capabilities of controllers and firmware, the continuous writing speed and random read-write performance of early SSDs were far inferior to international giants.

Uneven Quality: Some products even had large-scale repairs due to non-uniform production standards.

In 2015, a domestic storage company tried to launch its own branded SSD, but due to the use of outdated process technology, the product speed could not even catch up with Samsung’s mid-range model three years ago.

An engineer recalled: “Before the release, we were full of hope, but after the release, the reputation was negative, and even the advertising slogan became a joke in the industry.” Such failure cases were not uncommon at the time.However, domestic brands did not give up because of this. They gradually accumulated experience in the early trials and errors, laying the foundation for subsequent development.

Lurking: Policy Promotion and Technological Accumulation

At the same time, the “invisible hand” began to layout.

In 2014, the State Council issued the “National Integrated Circuit Industry Development Promotion Outline”, proposing to achieve autonomous and controllable goals in key areas of integrated circuits by 2030, with memory chips listed as one of the priority support directions. Under this policy background, the domestic storage industry ushered in unprecedented development opportunities.

Establishment of National Fund

To promote the development of the semiconductor industry, the National Integrated Circuit Industry Investment Fund (referred to as the “Big Fund”) was established in 2014, with a total fundraising of 130 billion yuan. The Big Fund provided key capital support for domestic storage manufacturers, especially the continuous investment in Yangtze Memory, which laid the foundation for its technology research and development and capacity expansion.

Local Government Support

In addition to national policies, local governments also support the development of local storage industries by setting up special funds, providing tax incentives, and talent introduction plans. For example, Yangtze Memory’s headquarters is located in Wuhan, and the Hubei provincial government has provided a number of policy supports for its project construction, helping it to start quickly in terms of funds and resources.

Technical Blockade Stimulates Innovation

The intensification of technology competition across the ocean has made Chinese enterprises face stricter technical blockades. This external pressure has instead stimulated the independent innovation motivation of domestic manufacturers, making them have to take a different technical path from international giants.

Establishment and Technical Path Selection of Yangtze Memory

As the leading enterprise in the domestic storage industry, Yangtze Memory has established a strategic direction of “starting from basic technology research” since its establishment in 2016.

The early goal of Yangtze Memory was not high, but focused on the technical verification of a 32-layer 3D NAND chip.Although this product’s performance is hard to compare with Samsung’s 64-layer chip at the same period, its significance lies in that it is the first time for Chinese storage enterprises to achieve autonomous control from design to manufacturing.

In 2018, Yangtze Memory released the world’s first Xtacking architecture technology. This technology not only improves the performance of memory chips but also significantly reduces manufacturing complexity and cost by separating the storage units and peripheral circuits and integrating them with vertical interconnection technology. This technological breakthrough has made Yangtze Memory shine in the global storage market.However, at the beginning of technology research and development, the challenges were huge.

In 2017, when the first generation of Xtacking chips was trial-produced, the yield was very low, and the product was almost difficult to mass-produce.

An engineer mentioned: “At that time, the lights of the whole building were often on until two or three o’clock in the morning, and many people even worried whether this technical direction was feasible.”However, after three years of continuous optimization and attempts, Yangtze Memory launched its first self-developed 64-layer 3D NAND flash memory chip in 2019 and quickly applied it to the consumer SSD market.

Although there is still a gap in performance and reliability compared with international brands such as Samsung, its cost performance advantage and local supply chain strategy have won a certain market share for it, and also made domestic storage have the foundation to compete with international giants for the first time.

Breaking Through: Technological Breakthroughs and Market Expansion

In the development process of Yangtze Memory, the Xtacking architecture is the most important technological milestone. The introduction of this technology not only marks Yangtze Memory’s transition from technological catch-up to independent innovation but also changes the global NAND flash memory industry’s technological competition landscape.

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The Xtacking architecture adopts a separate design for storage cells and peripheral circuits, efficiently integrating the two parts through vertical interconnection. This technological path brings many advantages.

Performance Improvement: Xtacking optimizes signal transmission speed, achieving higher random read-write speeds and lower latency. Compared with traditional designs, its performance improvement can reach more than 20%.

Manufacturing Efficiency: This architecture simplifies the production process, allowing wafer manufacturing and packaging testing to be carried out simultaneously, significantly shortening the production cycle.

Design Flexibility: Storage cells and peripheral circuits can be optimized separately, supporting higher-density storage cell stacking and increasing chip storage capacity.
With the support of Xtacking technology, Yangtze Memory quickly launched multiple generations of products.

In 2019, the first 64-layer 3D NAND chip was released, laying the foundation for the mass application of domestic NAND products.In 2020, the 128-layer 3D NAND was launched, reaching a global advanced level.

In 2022, the 176-layer 3D NAND was successfully developed, beginning to enter the high-end storage market and directly competing with Samsung and other international giants.These technological breakthroughs have enabled Yangtze Memory to have real competitiveness in the global market for the first time and have created favorable conditions for the rise of its retail brand, Zhitai.

Unlike early domestic SSDs, Zhitai has achieved a qualitative leap in quality, performance, and after-sales service.When the Zhitai SSD product TiPlus5000 was released, the market response was positive. Although it is still not as fast and performant as Samsung, its price is more attractive, and the cost-performance advantage is obvious.

In 2023, Zhitai released the TiPlus7100 series. This product is equipped with Yangtze Memory’s 128-layer 3D NAND chip, with continuous read-write speeds reaching 7100MB/s and 6500MB/s, not only catching up with Samsung’s flagship products but also performing excellently in terms of life and stability.

Once released, this product caused a warm response in the domestic market and became a star product on the JD platform.

In 2024, the performance of Zhitai during Double 11 became an important symbolic event in the development of the domestic storage industry:online SSD category Double 11 promotion total transaction amount (GMV) and sales double champion!

Zhitai’s JD transaction amount increased by 40% year-on-year, and total sales increased by 15% year-on-year. Among them, Zhitai TiPlus 7100 became one of the most popular explosive SSD products on the JD platform.

Specifically, the main reasons for Zhitai to surpass Samsung during Double 11 slaes promotion can be

Attributed to the following key factors:

Significant Price Advantage: During the 2024 Double 11 period, Zhitai attracted a large number of consumers through direct discounts and full reduction activities. During Double 11, many international first-line brands did not have price reduction measures, and even a certain brand had the operation of raising prices first and then returning to the original price.

Technology Empowers Promotion: Through social media, live streaming, and other forms, the advantages of Xtacking technology are transformed into selling points that consumers can perceive (such as faster transmission speeds, longer service life).

Service and Channels: Through JD’s self-operated and official after-sales support, the problem of low consumer trust in early domestic brands was solved.

Behind these data is a comprehensive breakthrough of Yangtze Memory and Zhitai in technology, brand, and market.

Rise: The Logic Behind and Industry Significance

The fundamental reason for Yangtze Memory’s rapid rise is its persistence and breakthrough in technological innovation.

The release of the Xtacking architecture has broken the traditional design thinking of the storage industry, raising the performance and manufacturing process of NAND flash memory to a new level. In the global storage industry, the core of NAND flash memory technology is dominated by companies such as Samsung, Micron, and Intel, and domestic storage has always been in a technological catch-up situation.

However, Yangtze Memory has successfully filled the technological gap through independent research and development and technological breakthroughs, achieving the goal of “autonomous control.” From the successful development of 64-layer, 128-layer, to 176-layer 3D NAND flash memory, Yangtze Memory has not only solved the technical shortcomings of domestic storage but also broken the technological blockade of international giants, proving that China has the ability to compete with the world’s top enterprises in the field of semiconductor storage.In addition, its technology accumulation and rapid iteration strategy are also crucial.

In just a few years, Yangtze Memory has continuously optimized the Xtacking architecture, introduced new products, and launched multiple generations of products. This ability to rapidly iterate technology allows it to quickly adapt to market demand changes, ensuring product competitiveness. At the same time, Yangtze Memory’s large-scale production has also helped it maintain a technological lead, ensuring domestic market supply and competitiveness.

Policy Support and Industry Environment

The “invisible hand” has been paying increasing attention to the semiconductor industry. From the establishment of the “Big Fund” to the local government’s support for the storage industry, national policies have provided great financial and policy support for domestic storage manufacturers. These supports not only help enterprises with technology research and development but also provide a more relaxed market environment for them.In addition to national policy support, local governments have also played an active role in promoting the development of the semiconductor industry.

As a key project supported by Hubei Province and Wuhan City, Yangtze Memory has received full support from local governments in terms of funds and talent introduction. This close cooperation between government and enterprises has prompted the domestic storage industry to complete the leap from technological catch-up to leadership in a short period.Moreover, the collaboration of the upstream and downstream of the industry chain has also provided a solid foundation for the development of domestic storage. The continuous improvement of materials, equipment, and packaging testing links has greatly enhanced the competitiveness of the domestic storage industry.

From the initial technological lag and market downturn to breaking through the encirclement through policy support, technological innovation, and brand promotion, domestic storage enterprises have gradually become an important force in the global storage industry. The success of Yangtze Memory and Zhitai marks the technological breakthrough of the domestic storage industry, but future competition is still full of unknowns.

Major personnel changes at Samsung Electronics

On November 27th, Samsung Electronics announced routine personnel changes for the 2025 class of presidents, totaling 9 individuals, with 2 being promoted to president and 7 experiencing role changes.

Samsung, in crisis, has implemented a reorganization of its presidency, focusing on the memory semiconductor business.

Moving forward, the memory business will be directly managed by the CEO and vice chairman, without a separate president position.

In the regular 2025 president reshuffle, Samsung Electronics appointed Vice Chairman and head of the Device Solutions (DS) division, Jeon Young-hyun, as CEO, aiming to revive the semiconductor business.


The Device Experiences (DX) division remains under the leadership of CEO and Vice Chairman Jong-hee Han, with Vice Chairman and head of the Business Support Task Force (TF) Hyun-ho Jeong retaining his position, solidifying the vice chairman system.

The personnel changes include: transforming the memory division into a system directly under the CEO’s jurisdiction, replacing the foundry (contract manufacturing) business leader, and appointing an experienced and mature CEO to manage new businesses. To overcome uncertain internal and external business environments and achieve new leaps, a personnel reform has been announced, including the allocation and mining of tasks.

Additionally, to strengthen semiconductor technology competitiveness and renew the organizational atmosphere, we have established a president-level CTO position in the foundry division and a president-level management strategy position directly under the DS division, empowering senior presidents with authority. Challenges such as brand and consumer experience innovation have been introduced to improve the company. The company announced a focus on enhancing its medium and long-term value.


Among them, Jinman Han, Vice President of the DS Americas (DSA) division responsible for the semiconductor business, has been appointed as the president of the foundry business division. Jinman Han has served as the head of DRAM and flash memory design teams, SSD development teams, and the Strategic Marketing Office, and was appointed as the head of the Americas region at the end of 2022, leading the semiconductor business at the forefront. With his combination of technical expertise and business acumen, along with extensive experience dealing with global customers, it is expected that he will enhance the competitiveness of the foundry business through process technology innovation and strengthening networks with key customers.

Kim Yong-gwan, a member of the Business Support Special Task Force (TF) and vice president, has been promoted to the position of President of Management Strategy for the DS division. Kim Yong-gwan, after working in semiconductor planning and finance, and in the Strategy Group and Management Diagnostics Group of the Future Strategy Office, moved to the Business Support TF in May, responsible for semiconductor support, and is expected to play a leading role in the early recovery. It is reported that Samsung has indicated an intention to enhance semiconductor competitiveness through this forward deployment.

Vice Chairman Jeon Young-hyun, who is also the head of the DS division, serves as Samsung Electronics’ CEO and head of the DS division, memory business division, and SAIT President.

The CEO of Samsung Electronics has traditionally been a vice chairman. In particular, the DS division is generally led by executives such as Chang Kyu Lee and Ki Nam Kim.

Under the leadership of former DS division head Chang Kyu Lee, he unusually held a president-level position, but in May of this year, Vice Chairman Jeon Young-hyun took over the organization again and elevated the status of the president.

Samsung Electronics is expected to shift from a single CEO system led by the DX division head (Vice Chairman) Han Jong-hee to a dual CEO system, including the former vice chairman, thereby enhancing the competitiveness of the semiconductor business. Samsung Electronics explained that the reason for restoring the two-person system of CEO and vice chairman is “to establish a business responsibility system for each division.”

Nam Seok-woo, CEO of the Global Manufacturing and Infrastructure Headquarters of the DS division, has been transferred to the position of Chief Technology Officer (CTO) of the foundry division.

It is noteworthy that a direct system with the CEO also serving as the head of the business division has been established.

Most importantly, as Samsung Electronics’ memory division has ceded leadership in the high-bandwidth memory (HBM) and other artificial intelligence (AI) memory markets to competitors, a seasoned senior leader seems to have issued a special command to directly lead the division.

Jong-hee Han, Vice Chairman and head of the DX division and Home Appliances (HA) division, will also serve as the chair of the newly established Quality Innovation Committee.

This is seen as a determination to fundamentally prevent quality disputes over Samsung Electronics’ products, in light of recent quality controversies surrounding the Galaxy Buds.

Lee Young-hee, head of the Global Marketing Office and Global Brand Center of the DX division, has been appointed as the chair of the Brand Strategy Committee.

Wonjin Lee has been appointed as the head of the Global Marketing Office of the DX division. Wonjin Lee, a Google advertising and services business expert consultant, resigned from his position as the head of the service business team in the Mobile Experience (MX) division at the end of last year and will return to the management frontline after a year, serving as the head of the global marketing department, overseeing marketing, branding, and online business.

Koh Han-seung, CEO of Samsung Bioepis, has been transferred to the position of head of Samsung Electronics’ Future Business Planning division.

Park Hak-gyu, head of the Management Support Office of the DX division, has been transferred to the position of president, responsible for Samsung Electronics’ business support TF.

Samsung Electronics usually appoints presidents in early December, but this year, like last year, it was advanced by about a week.Previously, Samsung Electronics Chairman Lee Jae-yong stated in his final remarks at the second trial on November 25th, “I am well aware that there has been a lot of concern about the future of Samsung recently, and the reality we are facing now is more difficult than ever, but this is a difficult situation.

I will definitely overcome this and take a step forward.” He continued, “Please give us the opportunity to overcome this difficult situation and become a Samsung loved by the people.”

Therefore, following the personnel changes of the chairman, there is a high possibility of executive personnel and organizational restructuring in the near future.

Due to unfavorable internal and external situations, the scale of executive promotions is expected to be reduced compared to previous years.Samsung Electronics plans to complete personnel and organizational restructuring and hold a global strategy meeting in mid-December to discuss next year’s business plans.

STM32 Demo Board: Getting Started and Advanced Preparation

Essentials for Beginners

The development board may look simple, but many people are discouraged at the step of how to use it. Today, I’m here to teach you how to solve the problems of getting started with single-board computers (SBCs), taking the Orange Pi Zero 3 as an example. How many steps are generally needed to use an Orange Pi? First, prepare a USB Type-C power cable, a charger with at least 5V 2A , a memory card with a capacity of at least 8GB, and a Micro HDMI cable to connect to a monitor or TV to display information from the development board. Some Demo Boards may have DP or mini HDMI interfaces, or standard HDMI interfaces, and you will need to purchase the corresponding cables to match your development board.

custom Micro SDHC card 16GB
If your monitor doesn’t have a DP interface, you can opt for a DP-to-HDMI cable. However, as of now, there are still few Demo Boards without an HDMI interface. We also need to prepare a keyboard, and if you’re using a desktop like Windows, you’ll also need a mouse. If your Demo Board doesn’t have WiFi or Bluetooth, you’ll need to provide an Ethernet cable and access to the internet. Finally, you’ll need a working computer with a USB port. If your Demo Board has onboard eMMC, you won’t need to prepare a TF card. If your development board also has an M.2 SSD interface and you happen to want to use an SSD, you’ll also need to prepare an SSD.

After preparing all this hardware, the next step is to install the system. Installing a system on a development board is simpler than on a computer. First, find the official website of the development board and download the system you want to use onto your computer. Then you can proceed to install the system. There are several installation methods, which differ depending on which storage medium you want to install the system on, such as a memory card, eMMC, or SSD. Installing on a memory card is the simplest.

Here, pay attention to the protocols and sizes of the SSDs supported by the development board. There are two protocols: M.2 SATA SSD interfaces and NVMe SSD interfaces. In terms of size, they vary based on length with M.2 2230, 2242, and 2280 being the main sizes. You need to choose the SSD based on the protocols and slots provided by the development board.

Pay attention to the protocols and sizes of the SSDs supported by the development board. There are two protocols: M.2 SATA SSD interfaces and NVMe SSD interfaces. In terms of size, they vary based on length with M.2 2230, 2242, and 2280 being the main sizes. You need to choose the SSD based on the protocols and slots provided by the development board.

Flashing the system to the SSD is also done using the Ralink development tools, with the difference being the configuration file; just select PCI and the system installation is complete.

Once the hardware and software are ready, plug in the HDMI and power cables and wait for the system to boot. Note that some Demo Boards have a switch, which could be a selection switch or a push-button switch, so you should refer to the documentation for operation. Generally, the system will start automatically when powered, and if it doesn’t start automatically, check if the switch hasn’t been pressed.

Professional Player Essentials

Some commonly used tools in electronic design, which can also be considered essential, start with soldering. First is the soldering iron, which comes in temperature-controlled and adjustable temperature models. A temperature-controlled soldering iron is similar to this type where you plug it in and it directly reaches a fixed temperature.

The higher the wattage, the faster it heats up. An adjustable temperature soldering iron is similar to this type, generally adjustable between 200 to 500 degrees, because some chips have requirements for soldering temperature and cannot withstand high temperatures, so this adjustable temperature soldering iron has a broader range of applications. When using a soldering iron, you need a soldering iron stand, which comes in various types and can be chosen based on personal preference.

Soldering Iron

When using a soldering iron, you need to frequently clean the tip, which is where the soldering sponge comes in, similar to the one in the picture. Then there’s solder, which comes in leaded and lead-free varieties, with different tin content and wire gauges. I personally often use 63/37 tin with a 0.6mm diameter.

There’s also flux in the form of solder paste or rosin, solder paste is similar to the one in the picture. Rosin is similar to this type of desoldering pump. When soldering and needing to remove some solder, a desoldering pump is needed, which looks like the one in the picture. Then there’s the solder wick, which is this type of perforated board, but it’s basically disposable, and after soldering, it’s hard to clean and reuse.

Breadboard

A breadboard is a type of board where you can insert components and perform some debugging and testing.

Dupont Wire

Dupont wires are used to connect two endpoints of a test circuit, generally divided into male and female ends, with the female end being this type with holes and pins. Choose according to your needs, and the male end looks like this, which is also a commonly used small tool in testing circuits. You can insert Dupont wires or their corresponding sockets, and this is the socket corresponding to the pins.

Tinned Wire

Then there’s tinned wire, also known as enameled wire, which comes in different thicknesses and lengths, and is also commonly used in testing to connect two solder points.

Others

Tweezers are used as conductors for adding small precision components, and small surface-mount resistors and capacitors are commonly used. Flush cutters are used for trimming, similar to this type, generally for cutting the leads of some soft components. To strip the outer skin of wires, you need wire strippers, which are also commonly used.

A multimeter is also the most commonly used tool for measuring current, voltage, resistance, capacitance, and continuity, which can be said to be the most commonly used tool in electronic design.

Conclusion

Then there are some tools that are not commonly used at the beginning of electronic design, but can be added later when needed, such as hot air guns, needle-nose pliers, screwdrivers, some fixtures, heat shrink tubes, regulated power supplies, oscilloscopes, and logic analyzers. Basic electronic design may not need these for the time being.

This article introduces how to choose and use STM32. It is hoped that through the introduction in this article, beginners can understand the basic concepts and entry guide of STM32 for subsequent learning and application. If you don’t understand embedded systems, come to me. Thank you, everyone.

SK Hynix’s NAND FLASH

SK Hynix’s NAND FLASH Market Share to Exceed 20% for the First Time

SK Hynix’s global NAND flash memory market share is expected to surpass 20% for the first time this year. SK Group Chairman Chey Tae-won has decided to take personal charge of the NAND business, which is expected to accelerate the process of narrowing the gap with market leader Samsung Electronics.Industry insiders stated on November 18th that SK Hynix’s global NAND market share, calculated by sales (according to IDC statistics), has increased by more than 10 percentage points over the past four years, growing from 11.7% in 2020 to 22.5% in the second quarter of this year. Although SK Hynix acquired Intel’s NAND division and launched Solidigm in 2021, the expansion of its market share was not as rapid as anticipated, rising from 13.7% in 2021 to 19% in 2022, but almost stagnating at 19.2% last year. The semiconductor economic downturn had a significant impact on Solidigm’s ongoing deficits.
SK Hynix’s NAND FLASH
Solidigm has steadily reduced its deficits and successfully turned a profit in the second quarter of this year (net profit of 7.86 billion won). Due to increased investment in AI data centers, the demand for high-capacity enterprise SSDs (eSSDs) has surged, and Solidigm’s competitiveness in this market has been rewarded. Only Samsung Electronics and Solidigm possess quad-level cell (QLC) NAND technology. NAND is categorized into SLC, MLC, TLC, and QLC based on data storage methods. Compared to SLC with the same cell, QLC can store four times more data, easily achieving high capacity and improving production cost efficiency.Due to sluggish demand in PCs and mobile devices, SK Hynix’s NAND shipments in the third quarter decreased compared to the previous quarter. However, profitability was maintained at a level similar to the second quarter because the average selling price (ASP) of high-value eSSDs increased by about 10% from the previous quarter. eSSDs accounted for more than 60% of SK Hynix’s NAND sales in the third quarter.Thanks to the continued strong demand for eSSDs, SK Hynix’s annual NAND market share this year is expected to exceed 20% for the first time. During a conference call to announce the third-quarter results, SK Hynix stated, “Although the NAND market share calculated by volume may decrease this year, we anticipate an increase in the market share calculated by sales compared to last year.”SK Hynix is poised to accelerate the reduction of the market share gap with Samsung Electronics, whose NAND market share is in the mid-30% range. SK Hynix aims to increase its market share with a focus on high-value products such as high-capacity eSSDs. The company recently launched a new eSSD product capable of achieving 122TB, the largest capacity for NAND solutions. There are also predictions that with Chairman Chey Tae-won recently taking over as the chairman of the Solidigm board, the NAND business will be further strengthened.

TLC VS QLC

Which is Better: TLC vs QLC?

TLC vs QLC: A Quick Overview

TLC VS QLC, TLC and QLC are types of NAND flash memory. They store data in cells, with each cell holding multiple bits. The more bits in a cell, the more storage capacity, but can slow down performance and reduce durability.

  • Triple-Level Cell holds 3 bits per cell, balancing capacity, price, and speed. It’s commonly used in SSDs and memory cards for general consumers.
  • Quad-Level Cell stores 4 bits per cell, offering larger storage at a lower price. But, this increased capacity comes with some trade-offs in performance and longevity.

This write-up compares both, showing you which is best for your device—like an SSD, SD card, or laptop upgrade.

Key Differences Between TLC and QLC

TLC and QLC flash storage vary in many ways, from cost to capacity and speed.
QLC VS TLC NAND FLASH

Cost

TLC and QLC NAND flash have a notable cost difference. With QLC storing four bits per cell, it’s generally cheaper than TLC, which only holds three bits. This extra data capacity in QLC lets manufacturers reduce production costs, allowing more storage in the same space.
However, QLC’s lower cost often means reduced speed and durability. For those seeking affordable, high-capacity storage, like for media libraries, QLC can be a solid choice. But, for high-performance or long-lasting storage, QLC’s compromises may not be worth the savings.

TLC VS QLC Lifespan and Durability

With three bits per cell, TLC is more durable than QLC, which holds four. This extra bit in QLC causes cells to wear down faster under frequent use. TLC handles more write-and-erase cycles and performs well under heavy tasks like gaming or workstation applications. QLC, in contrast, is ideal for data that is mostly read and rarely changed.

TLC VS QLC Speed and Performance

TLC tends to outperform QLC in speed and performance. It’s faster because it uses three bits per cell, making data processing quicker with less voltage consumption. This is especially noticeable in tasks like video editing, gaming, and software development, where frequent data writing is required.
TLC’s faster write speeds enhance both efficiency and overall experience. On the other hand, QLC is slower and might not handle demanding tasks well, but it works fine for basic storage like photos or media files.

TLC VS QLC Storage Capacity

QLC drives are great for those who need large storage. With the ability to store four bits per cell, it achieves high density and offers massive storage capacities, often reaching 4TB or more, all at a lower price than comparable TLC drives. This makes QLC a strong contender for archiving and backup needs.

Other Differences to Keep in Mind

  • Power Use: TLC consumes more power because it stores three bits per cell. For most users, the difference isn’t significant.
  • Heat: TLC generally creates less heat because it handles more write cycles without issue. QLC, due to its denser cells, may struggle with heat over time.
  • Endurance and Use: TLC is more durable and works better across various tasks. QLC is ideal for light tasks like storing large files or backups where frequent writes aren’t required.

Relationship Between NAND Flash Types and Memory Cards

The performance of SSDs, SD cards, and microSD cards depends largely on the NAND flash type. SLC, TLC, and QLC each have their unique effects.

MicroSD Cards

  • TLC Flash: More durable and faster, making it ideal for tasks with frequent writes like 4K video recording and high-speed photography. It offers better performance and reliability.
  • QLC Flash: More affordable but slower and less durable. Best for storage-heavy tasks like media backups or long-term storage, but not suitable for high-performance needs.

SSDs

  • TLC Flash: Offers a balance between price and performance, with solid read/write speeds and better durability than QLC. Great for general computing, gaming, and applications.
  • QLC Flash: Cheaper but slower and less durable. Best for more storage needs like data archiving or home servers, but not recommended for high-demand tasks.

SD Cards

  • TLC SD Cards: Best for 4K video or high-resolution images, offering fast write speeds and good durability for professional use.
  • QLC SD Cards: Suitable for basic storage needs, like casual photography or personal use, where speed and frequent writes aren’t crucial.

TLC vs QLC: A Quick Comparison

Best Use Cases for TLC

TLC is ideal for users who need a balance between performance and reliability. It handles fast data access and long-term durability well, making it great for demanding tasks.
For gamers, TLC’s fast read and write speeds ensure smooth gameplay and quick load times. Professionals working on video editing or 3D rendering will find TLC’s ability to manage frequent large data transfers helpful. Content creators can rely on TLC for large, high-resolution files.
While TLC is more expensive than QLC, its consistent performance and durability make it a good investment if you need reliable storage for heavy tasks.

Best Use Cases for QLC

QLC memory caters to users needing substantial storage on a budget. It provides plenty of room but sacrifices speed, making it less ideal for users with high-performance needs.
QLC shines in media storage, offering plenty of room for large files like videos and photos at a lower price. It’s perfect for backups or casual storage needs, where speed isn’t as critical. If you’re doing lighter tasks or just need storage for everyday files, QLC is a solid choice.

Performance Benchmarks

TLC drives typically offer write speeds of around 500–550 MB/s. These speeds make TLC suitable for gaming, video editing, and handling large files easily.
QLC drives are generally slower, with write speeds between 300 and 500 MB/s. While this is slower, it’s fine for everyday tasks like file storage or light editing. However, frequent large file writes could slow things down. For users prioritizing heavy writes or long-term reliability, TLC is better. But for those who need bulk storage on a budget, QLC still delivers.

Future of NAND Flash

As storage demands rise, the NAND flash industry is adapting quickly. QLC (Quad-Level Cell) is gaining traction, with improved speed, durability, and efficiency shaping its future in the consumer market.
One advancement is 3D NAND stacking. This technology increases storage capacity while improving efficiency and lifespan by stacking memory cells vertically. The stacked structure reduces wear on cells during read/write operations, helping extend the life of devices like SSDs and microSD cards.
3D NAND stacking enables QLC to offer larger capacities without compromising performance. Additionally, better wear leveling and error correction algorithms are helping close the gap between QLC and TLC (Triple-Level Cell), making QLC a solid choice for budget-conscious consumers.

Final Words

The right option depends on your needs.

  • Choose TLC for reliable, long-lasting performance and faster speeds for tasks like gaming or video editing.
  • QLC is a good budget option if you need a lot of storage. It’s slower and not as durable, but it’s enough for tasks like archiving or media storage.

Factor

TLC (Triple-Level Cell)

QLC (Quad-Level Cell)

Cost

Higher, but offers better performance and durability.

More affordable, ideal for large storage needs.

Lifespan

Longer lifespan, good for frequent write-heavy tasks.

Shorter lifespan, not ideal for high-write environments.

Speed

Faster read and write speeds, suitable for performance tasks.

Slower performance, better for light read/write use.

Storage Capacity

Lower storage density compared to QLC.

Higher storage density, great for large capacity needs.

Best For

Gaming, video editing, OS drives, and frequent data writes.

Backups, media storage, and light usage.

SLC VS TLC

Is SLC Better Than TLC for Memory Cards?

SLC and TLC: An Introduction

SLC and TLC are both NAND flash memory types that store data in distinct ways. Each type stores data differently, which impacts their performance, lifespan, and price.

Single-Level Cell

SLC stores a single bit of data in each memory cell. This simple design leads to faster read and write speeds. It also offers greater durability because the cells experience less wear over time. SLC is commonly found in high-performance settings like enterprise SSDs, servers, and industrial equipment. However, its advanced capabilities come with a higher price tag.

Triple-Level Cell

TLC stores three bits per cell, making it an efficient way to increase storage without using more space. It’s found in smartphones, laptops, and many consumer SSDs. The tradeoff is slower speeds and lower durability compared to SLC. It’s frequently used in budget-friendly SSDs and memory cards, offering decent performance for the price. But its lifespan tends to be shorter with regular use. This write-up will simplify these differences so you can select the right card confidently.

Key Differences Between SLC and TLC

Deciding between Single-Level Cell and Triple-Level Cell NAND flash technology can impact your memory card’s performance. Each has benefits, depending on your priorities like cost, durability, speed, and performance.

SLC VS TLC

Cost

SLC memory cards come at a premium. Each cell holds just one bit, maximizing speed and durability. Yet, this design requires complex manufacturing, pushing up the price.
TLC cards, by comparison, store three bits per cell, making them easier and cheaper to produce. This high data density also allows for more storage at an affordable price, perfect for everyday users.

Life Cycle / Durability

SLC memory cards stand out for durability. Each cell holds a single bit, allowing SLC cards to handle thousands of write cycles without a noticeable slowdown. They’re perfect for intense use cases like professional video work or high-end applications, requiring stability.TLC cards, but, don’t last as long. With 3 bits per cell, they wear out quickly, especially for intensive writing tasks, such as video recording. Though TLC works well for most general uses, it may not endure as well under constant heavy use.

Speed

SLC memory cards offer faster read and write speeds due to their simple minimal design. They enable swift data access, making them ideal for handling large files like 4K videos or high-resolution photos. TLC cards work well for general use but can lag with heavy writing demands. You might notice this during large file transfers for gaming, video editing, or high-speed photography.

Performance

Known for both speed and resilience, SLC cards excel in high-demand situations. They handle intensive work, from video recording to large file storage, giving professionals reliable performance.

TLC cards are better for general use, such as saving photos, music, or videos on a phone or camera. However, they may not hold up well under demanding tasks like continuous 4K recording.

Power Consumption

SLC cards demand more power to support their high speeds and durability. This extra power use can affect battery life in devices like drones or cameras.TLC cards are more energy-friendly, needing fewer write cycles and lower power. They fit well in portable devices where conserving battery life is important.

Capacity

With smaller capacities, storing one bit per cell, SLC cards often come in lower storage sizes. It makes them suitable for users who prioritize durability over space.TLC cards can hold more data due to their three-bits-per-cell design, making them a good choice for extra storage without spending too much.

Impact of SLC and TLC on Memory Card Performance

Speed and Performance

Speed and performance in memory cards depend largely on the flash technology used. Here’s how they compare:

  • Write/Read Speeds: SLC cards store just one bit of data per cell, making read and write processes faster. This gives SLC cards a performance edge over TLC cards, which manage more data per cell. For users, this means faster data transfer—key for time-sensitive tasks.
  • Random Access Times: SLC cards excel at quickly accessing scattered data. This efficiency is crucial for tasks involving large files, where quick retrieval is essential. Whether you’re editing video or shooting in burst mode, SLC ensures smooth performance with minimal delay.
  • Applications: SLC’s speed makes it perfect for demanding tasks:
  1. 4K Video Recording: Recording 4K video requires high write speeds to avoid frame drops. SLC cards keep up without interruptions.
  2. Large File Transfers: When transferring heavy files like RAW images or high-res video, SLC cards make it quick, saving valuable time for professionals.

Capacity

TLC provides substantial storage at a price SLC can’t match. Here’s why:

  • Bits Per Cell:TLC cards use cells that store three bits, while SLC cards store only one bit per cell. This structure gives TLC cards a much higher data capacity than SLC cards of the same dimensions.
  • Cost Savings:With higher data density per cell, TLC card production costs less, which can mean savings. If storage capacity matters more than speed, TLC cards provide a budget-friendly option. A 128GB TLC card often costs less than a smaller SLC card, making it great for affordable storage or backups.

SLC Vs TLC: Which is Better?

For Casual Users: TLC

For casual use, Triple-Level Cell memory is practical and cost-effective for:

  • Photography & Video: Affordable with enough speed for HD videos and personal photos.
  • Gaming: Suitable for mobile and console gaming, offering decent speed and storage at a low cost.
  • Basic Storage: Plenty of space for files, documents, and images, perfect for non-demanding uses.

Benefits

  • Large storage capacities at a lower cost.
  • Suited for casual gaming, photos, and HD video storage.

Limitations

  • Fewer write cycles mean reduced lifespan.
  • Limited speed for professional tasks.

For Professionals: SLC

Single-Level Cell memory is well-suited for professionals requiring reliability and high-speed performance. It thrives under heavy read/write demands, especially in areas like:

  • Video Production in 4K or 8K:SLC prevents frame drops, maintaining a steady recording speed for high-quality footage.
  • Rapid-Fire Photography:With its quick speeds, SLC is best for photographers handling large RAW files, minimizing transfer delays.
  • Data-Heavy Fields:SLC’s durability ensures consistent performance in applications needing frequent data writes, like research and data logging.

Benefits

  • Exceptional durability and reliability.
  • Maintains fast speeds for high-demand tasks.

Drawbacks

  • Costs more per gigabyte.
  • Offers less storage than TLC for a similar price.

Cost vs Performance

Picking between SLC and TLC is really a question of performance needs vs budget constraints.

When SLC Shines?

In fields needing speed and reliability, like videography, lab research, or high-speed photography, SLC’s performance and longevity are worth the extra expense. It’s an investment that supports intensive workflows.

Where TLC Fits Best?

For most people, TLC is a great fit. If you’re not working in a high-demand field, it provides solid value, offering ample storage for casual photos, videos, and everyday files.

The Future of NAND Flash Technology

Advancements in SLC and TLC

NAND flash technology is evolving quickly. SLC and TLC are improving as demand for faster, more durable memory cards rises.

SLC will continue to dominate in high-performance areas, like 4K video and professional photography. The focus will be on boosting endurance and speed while keeping costs down.

TLC will focus on maximizing storage and lowering prices. Its higher density makes it a good choice for everyday use, with manufacturers working on improving its reliability.

Emerging Technologies: QLC and PLC

Newer technologies like QLC and PLC are in development. QLC stores four bits per cell, and PLC aims to store five. These technologies offer more storage for less money but come with trade-offs in speed and durability. As they mature, they could change the memory card market, especially for budget-conscious consumers.

Trends and Predictions

In the future, mobile devices, cameras, and consoles will continue to demand more storage and faster speeds. SLC will remain important for professionals, while high-density NAND like TLC, QLC, and PLC will become more common for general consumers. Manufacturers will need ways to balance performance and price, giving users more choices.

SLC vs. TLC: Final Verdict

Feature

SLC

TLC

Cost

Higher price per GB

More affordable

Durability

Exceptional, ideal for heavy use

Moderate, suited for lighter use

Speed

Faster read/write speeds

Adequate for general tasks

Performance

Optimal for high-demand tasks

Suitable for everyday use

Power Consumption

Higher power usage

Lower power usage

Capacity

Lower capacity per card

Higher capacity per card

Best for

Professionals(e.g.,photographers, videographers)

Casual users (e.g., general storage)

SLC and TLC memory cards suit different needs. SLC is fast and durable, perfect for pros handling 4K video and large data tasks, though it’s pricier. With more storage and a lower price, TLC is a good pick for casual users storing photos and documents.

New NAND tech like QLC and PLC continues to expand storage choices, balancing cost and performance for various needs.

Samsung Electronics Plans AND layoffs

According to industry sources, Samsung Electronics’ latest storage chip development roadmap indicates that the company plans to produce at least 400-layer cell vertical stacking vertical NAND by 2026 to maximize capacity and performance.

Samsung Electronics plans to adopt a new bonding technology, creating cells and peripheral devices on separate wafers, and then bonding them. This method will achieve “ultra-high” NAND stacks with large storage capacity and excellent heat dissipation performance, which are very suitable for ultra-high capacity SSDs in AI data centers. This chip is called Bonding Vertical NAND Flash, or BV NAND for short, and its bit density per unit area will be increased by 1.6 times.

Samsung Electronics plans to launch V11 NAND by 2027, further developing its stacking technology, with a 50% increase in data input and output speeds. The goal is to develop NAND chips with more than 1,000 layers by 2030 to achieve higher density and storage capacity.

SK Hynix has also begun the development of 400-layer NAND Flash and is currently developing process technologies and equipment, with the goal of achieving mass production by the end of next year and full-scale mass production by the first half of 2026.

Kioxia has indicated in its technology roadmap that the number of 3D NAND layers will grow at an annual rate of 1.33 times, reaching a level of 1,000 layers by 2027, with NAND chip density reaching 100 Gbit/mm²

This year, as the NAND processes of storage manufacturers have been iterated, the supply of NAND with more than 200 layers has increased, and high-density NAND has gradually made progress in market applications:

Samsung’s 236-layer V8 TLC NAND production has increased significantly, and 290-layer V9 TLC/QLC NAND has begun mass production;

SK Hynix has expanded the application of 238-layer NAND in enterprise-level SSDs and launched 321-layer NAND Flash;

Kioxia and Western Digital have promoted the acceleration of 218-layer BiCS8 NAND in OEM manufacturers, and 2Tb QLC NAND produced using BiCS8 and CMOS bonding technology has begun sampling;

Micron has mass-produced 276-layer G9 TLC NAND and has adopted it in SSDs for client-side OEMs.

Samsung Electronics undergoes four rounds of massive layoffs

Samsung Electronics to Implement Four Rounds of Voluntary Retirement, Contract Manufacturing Team to be Reduced by Over 30%.

According to a high-ranking official at Samsung Electronics on November 2nd, the first round of voluntary retirement will be offered to CL3 (Associate Manager level) employees who have worked for more than 15 years but have not received a rank in the last 5 years. The second round will be for employees who have worked continuously for over 10 years; if the target is not met, the third round will be expanded to all employees. It is reported that the final fourth round will be conducted as part of normal operations. The conditions for voluntary retirement are expected to include a compensation package totaling approximately 400 million won (currently about 2.064 million yuan), which includes a severance payment based on CL3 and four months’ salary of 380 million won.

Especially, the 8-inch contract manufacturing and technology team will see a reduction of over 30%. It is understood that Samsung is considering a proposal for voluntary retirement for unpaid employees. This comes after Samsung Electronics recorded a profit shock in the third quarter of this year due to a decline in competitiveness in its flagship semiconductor business, triggering a crisis theory within the group.

This is interpreted as part of a reform plan to overcome aging business environments and poor performance.

Samsung recently announced third-quarter revenue of 79.1 trillion won, slightly exceeding the expected 79 trillion won, and operating profit of 9.18 trillion won, which exceeded the expected 9.1 trillion won, but was significantly lower than the estimated 11.456 trillion won in operating profit by the London Stock Exchange. Samsung’s Vice Chairman and newly appointed head of the Device Solutions (DS) division, Jeon Yong-hyun, apologized rarely after releasing the performance guidance.

Among them, Samsung’s semiconductor division announced an operating profit of 3.86 trillion won (about 2.8 billion USD) for the third quarter, a 40% decrease from the previous quarter.

Although its memory chip division benefited from strong demand for artificial intelligence (AI) and traditional server products, Samsung stated that “inventory adjustments had a negative impact on mobile demand.” The company said it is also dealing with the issue of “increased supply of mature process products from China.”

Additionally, according to insiders on November 1st, Samsung Electronics has shut down over 30% of the 4nm, 5nm, and 7nm wafer contract manufacturing production lines at its Pyeongtaek 2 (P2) and 3 (P3) factories, and plans to expand the suspension of production to about 50% by the end of the year. The company intends to gradually halt production while monitoring customer orders.

industrial memory cards

Your Reliable Industrial SD Card Manufacturer From China

As a professional industrial SD card manufacturer, MRT offers a diverse range of industrial SD cards, Micro SD cards and CF Cards with top quality, good performance and suitable price.

  • MOQ: 100 PCS for standard order
  • Customization Service With Free Sample
Industrial SD Cards

Industry Leading Manufacturer

As a professional industrial SD card manufacturer with over 10 years of experience, we specialize in producing high-quality memory card and accessories.

OEM/ODM Service Offered

We offer comprehensive OEM/ODM services for industrial sd card manufacturing, delivering customized, high-quality solutions tailored to your needs.

Free Sample Offered

We provide free samples of our industrial memory card, allowing you to experience our exceptional quality before placing an order.

Manufacture&Bulk Industrial SD Card From MRT

MRT supplies consumer memory cards as well as industrial SD card. Bulk memory cards in industrial grade delivers unparalleled performance, endurance, and wide temperature. Embracing a strong compatibility is an indispensable characteristic for industrial models. As products in this group are fully tested to stand the harshest environmental conditions, such as extreme temperatures. Furthermore, the capability against shock or vibration is more powerful. In addition, the lifespan can be 10 times longer than standard storage cards which is incredible.

Over the years, removable storage has been an essential accessory in consumer gadgets. In the industrial system, memory cards are likewise prominent to achieve auto-refresh read distribution protection. Industrial SD cards in this range adopt SLC, MLC and TLC flash technology, it will feature wear leveling and IOPS optimization. Embedding industrial-grade hardware offers a high durability when you use our industial sd cards in harsh situation.

Bulk 256gb Micro SDXC Card

Industrial Micro SD Card

SLC/MLC/TLC NAND Flash Wider Temperature: -45C° to 90C°

128GB SDXC Card U1

Industrial SD Card

SLC/MLC/TLC Wider Temperature: -45C° to 90C°

CF card 16GB 133X

Industrial cf card

SLC/MLC/TLC Nand Flash Wider Temperature: -45C° to 90C°

Industrial SSD (solid state drive)

SLC/MLC/3D TLC Nand Flash SSD M.2, mSATA, and 2.5 inches

The application of Industrial SD cards

Due to the powerful feature, we can apply them in a myriad of equipment. For example, IoT system connects different devices together. The process of it is to build a communication between devices and the cloud. Therefore, IoT has an increasing demand of data storage. Although Industrial Micro SD or SD cards are still using for storage, the devices are more intelligent and complicate. An IoT device usually has gateway to connect things to the cloud, which acts as a bridge to transfer data. Ensuring a stable data accessing, this bulk Micro SD card must be against harsh environments. Such as extreme temperature, high rate for dust and water resistance and X-ray. Thus, standard flash card is hard to meet these requirements.

In addition, Industrial memory cards are also friendly for medical equipment. As these devices are storing patient settings and data for a quick, accurate setup, they need to operate in any condition. Sometimes you may use it in high humidity, sometimes you have to work in extreme hot place. By and large the status of bulk memory card must be no faults and good reaction.

What else will still use Industrial memory cards? There is transportation vehicle, action cameras, embedded applications, Automotive, Data server, Networking and so on. All in all, it is a stringent storage and helpful for high performance.

Types of Industrial memory cards

MRT has developed a splendid series of industrial cards passing thorough tests. The storage group incorporate Micro SD, SD, CF, and SSD. In general, the shape and weight are same as regular card. The capacity is likewise ranging from 512MB to 512GB. To know them fully Let’s go delve into their differences.

 

Industrial Micro SD cards.

The dimension size is same as standard model. The using condition is entirely different whereas temperature range. As industrial model can support wider temperature from -45C to 90C, therefore, automotive applications and navigation system use it as boot media.

Industrial SD cards.

This industrial type can offer superior performance supporting various industrial applications. Such as aerospace ship, data systems, telecommunications, embedded gadgets, and POS systems. It utilizes pSLC model to provide stable read/write speeds up to 100MB/s.

Industrial CF Card.

It has a wide range adopting SLC, MLC and TLC flash. MRT offers a locked BOM to guarantee a long-term supply. Industrial compact flash card are using PATA interface, which can stand extreme temperature.

Where to buy industrial memory cards?

Indeed, industrial rugged sd cards are created for challenging environments. The expense on developing such durable and rugged memory card is comparatively high. Furthermore, many clients use them for embedded applications, the quality of them matters. Buying industrial memory cards from reliable source is a key.

Purchasing with Brand supplier.

High reputation always brings trust. Memory cards were firstly produced by Sandisk and Toshiba, they have rich experiences on manufacturing high-quality ones. Also, brand supplier like Kingston and Samsung has lots of branches to support after sales service. Users can be free from the confusion of making decision.

Placing orders with professional Manufacturer.

Industrial memory cards are the most stringent storage, which are wearing high performance, endurance, compatibility, and stability. It is hard to order in retail store due to the low demands. Meanwhile, consumer market sells more about standard SD cards. All in all, we need go for professional factory like MRT3C. As a professional industrial SD Card manufacturer has detailed introduction as well as datasheet, users can get complete answers there.

Tips for identify industrial memory cards (What are the differences between Standard NAND Flash and Industrial  NAND Flash)

There are some obvious differences as follows.

1.Temperature range

Industrial grade cards can be used in wider temperature, it is from -45C to 85C. However, consumer grade cards are only available from 0 to 65C or -25 to 85C.

2.Lifespan

Standard memory cards are usually using MLC and TLC flash, the life circle is 10,000 times at most. One time is one full writing and erasing. Industrial memory cards use SLC flash often, the life circle can be 30,000 times or more.

3.Performance

Undoubtedly Industrial memory cards lead a better performance due to its precise structure and raw material.

Conclusion

Industrial memory cards stand for profession, high technology, and sophistication. No matter embedded systems, GPS, military machines, or surveillance cameras, all of them can work dramatically perfect with industrial SD cards. Relying on these professional indurstial SD cards is suitable for improving the performance of those equipment from industry.

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