February 27th 2025

Global Flash Memory Breakthrough: 332-Layer 3D NAND Sets New Industry Benchmark

Kioxia/SanDisk Collaboration Reaches New Heights

Kioxia Corporation and Western Digital’s SanDisk have jointly developed the 10th generation BiCS 3D NAND flash memory, achieving world-leading specifications in:

  • Stacking layers (332 layers)
  • Storage density (36.4Gb/mm²)
  • Interface speed (4800MT/s)

Technological Innovations

Adopting CBA (CMOS Bonded Array) wafer bonding technology inspired by Yangtze Memory’s Xtacking architecture, the new design separates CMOS control circuits from memory arrays for optimized performance.

3D NAND flash memory Layer Stack Comparison

  • Kioxia: 332 layers (+38% vs 8th gen)
  • SK Hynix: 321 layers
  • Samsung: 290 layers
  • Micron: 276 layers

Global Storage Evolution: 332-Layer 3D NAND flash memory Milestones vs Quantum Storage Breakthroughs (2023-2030)

Timeline Technology Area Key Milestone Technical Specifications Major Players Future Targets
2023 Q3 3D NAND Stacking World’s first 332-layer flash 36.4Gb/mm² density
4800MT/s speed
Kioxia/WD 1000-layer by 2027
2024 (Projected) Controller Technology 64-channel UltraQLC controller 64 NAND channels
Hardware acceleration
SanDisk 256TB SSD by 2025
2025 (Roadmap) QLC Storage 2Tb NAND implementation 128TB SSD capacity
Adaptive power management
Western Digital 512TB SSD by 2027
2026 (Research) Quantum Storage Crystal defect utilization 1mm³ crystal storage
TB-scale capacity
UChicago PME Commercialization research
2030 (Target) Petabyte Storage UltraQLC full implementation 1PB SSD capacity
64+ channel support
Industry Consortium Exabyte-scale solutions

Power Efficiency Advancements

The new PI-LTT (Precision Input – Low Temperature Transfer) technology reduces:

  • Input power consumption: 10% reduction
  • Output power consumption: 34% reduction

Roadmap to Exabyte Storage

SanDisk’s UltraQLC platform combines:

  • 64-channel custom controller
  • BICS 8 QLC 3D NAND
  • Adaptive power management

Projected capacities:

  • 2025: 256TB
  • 2027: 512TB
  • 2030: 1PB

Revolutionary Crystal Storage Technology

University of Chicago researchers achieved terabyte-scale storage in 1mm³ crystals using:

  • Praseodymium-doped yttrium oxide substrates
  • UV laser charge trapping
  • Quantum-inspired binary encoding

Key breakthrough: Utilizing crystal defects as binary storage units with:

  • Charged defects = 1
  • Neutral defects = 0

Global NAND Demand Drivers

Application 2025 Demand (Exabytes) 2030 Projection Growth Rate
AI Training 180 EB 1,200 EB 55% CAGR
Smartphones 650 EB 950 EB 8% CAGR
Data Centers 420 EB 1,800 EB 34% CAGR
EV Storage 30 EB 280 EB 65% CAGR

Source: TrendForce & Gartner (Q2 2024 Data)

Patent Control Landscape

Company Hybrid Bonding Patents Key Markets
Yangtze Memory 1,240+ China (80%), Global OEMs
Samsung 890 Korea, USA, EU
SK Hynix 670 Enterprise Storage
Western Digital 550 Cloud Providers

2026 Price War Forecast

Scenario 2TB SSD Price YMTC Impact
Base Case $75 30% market share
Tech Breakthrough $65 45% market share
Trade War Escalation $95 15% export limit

*Assumes 5% annual density improvement

“YMTC’s Xtacking 3.0 could capture 25% of global NAND capacity by 2028, fundamentally reshaping the $80B memory market dynamics.”

– TechInsights Senior Analyst

What is NAND Flash Memory and How it works

Global NAND demand triples, SSD prices may rise again.

How does the new X-NAND technology affect NAND Flash market?

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