Dash cams are the best safety partners for your driving. They can capture things like your daily commute, and road trips, or even help show off your neighborhood when selling your home. They’re also great for safety, as they can help prove who caused a car accident or record events around your parked car. Dashcams store data on SD or microSD cards. The storage is important because dash cams record for long periods. While large memory cards seem like a good choice, regular cards wear out quickly due to constant rewriting. Dash cams need high-endurance cards designed for heavy use. Picking the best micro SD card for a dash cam goes beyond capacity or cost. Look for one designed to handle constant use and high-pressure recording.
Different Types of Dash Cams
Each type of dash cam has a special purpose. Here are the main types:
1.Single Lens Dash Cams
Single-lens dash cams are the most basic models. They feature a single camera that records what happens in front of your vehicle. These are typically mounted on the front windshield and are ideal for basic recording needs.
2.Dual-lens dash cams (for front + rear recording)
Featuring two cameras, dual-lens dash cams offer both front and rear monitoring. The front lens records the road ahead, and the second lens covers the back. This combination provides well-rounded coverage for added safety.
3.Dual-lens dash cams (for front + inside recording)
Built for dual functionality, these dash cams record both the exterior and interior of a car. One lens captures the road, while the other monitors the cabin, focusing on passengers or the driver. They are particularly useful for rideshare drivers or for keeping track of activity within the cabin.
4.Professional Dash Cams
Built for commercial purposes, professional dash cams suit vehicles such as delivery vans, taxis, and company cars. They ensure reliable, continuous recording, helping businesses manage fleets and enhance security.
Why Is Choosing a Durable MicroSD for Dash Cam Important?
Choosing a reliable microSD card for dash cam is very essential. It will make sure that your footage will always be accessible when needed. Here’s why it’s crucial:
Reliable in Important Moments: You don’t want to find out after an accident that your video is gone or broken because the card wasn’t strong enough.
Never-ending Recording: Dashcams record continuously, day or night. A sturdy, high-quality card can protect your recordings from this continuous use, which a regular card might not be able to handle.
Works in Extreme Weather: A good microSD card can withstand harsh weather conditions. It’s better than a typical one, regardless of how hot or cold it is outside.
Understanding Flash Type Memory
Flash memory stores data reliably without power. Valued for its speed, durability, and compact form compared to hard drives, it’s common in storage devices, including SD cards. Three types of flash memory are commonly seen in dash cam micro SD cards:
Single-Level Cell: The most costly memory type, yet the most dependable and long-lasting. SLC is ideal for heavy-duty applications like dash cams since it can tolerate constant writing and wiping.
Multi-Level Cell: MLC can read and write faster than TLC due to its simpler structure. It is best suitable for devices that need fast data access.
Triple Level Cell: TLC is less expensive as compared to MLC or SLC. Its simple structure and high storage capacity make it the best fit for consumer-grade SSDs. TLC is frequently a wise option for those who do not intend to use the dash cam intensively.
Choosing the best micro SD cards for dash cams will take time and effort. Here’s what you can do:
Research before you jump into the market.
Don’t go on brand names, look out for reliable manufacturers.
Check reviews on their websites.
Compare prices in the market.
A few reliable manufacturers you can look into are SanDisk, Kingston, etc. No matter what SD card you opt for, we suggest you replace it annually. Purchasing the appropriate SD cards for UltraDash 4K video recording resolutions can make recorded video footage more dependable and frame-free. Determining which memory card types and speeds would function best is crucial. One-minute video at 30 frames per second roughly takes 450MB of memory. So for our 4k dash cam, you can use a U3 micro SD card. To view 4k videos clearly, it is best advised to move them to your computer because they seem choppy or lag if viewed on SD cards.
Pro Tip for Choosing a Suitable Micro SD Card for Dash Cam
Make sure the writing speed is sufficient when selecting a card. For recording 1080p HD video, a Class 10 (10MB per second) card is typically suitable. When making your initial choice, you can seek professional assistance.
SanDisk High Endurance Micro SD Card
Capacity: 64GB, 128GB
Speed Class: UHS-I U3
Endurance: Designed specifically for continuous recording
Samsung Pro Endurance Micro SD Card
Capacity: 32GB, 64GB, 128GB
Speed Class: UHS-I U3
Endurance: Designed for up to 43,800 hours of video recording
Kingston High Endurance Micro SD Card
Capacity: 32GB, 64GB
Speed Class: UHS-I U3
Endurance: Built for continuous writing and recording
Where to Buy the Best Micro SD Card for Dash Cam?
Numerous local and internet retailers carry high-quality micro SD cards for your dash cam. Among the reliable choices are:
Amazon: Provides a large selection of dash cam micro SD cards along with user reviews, making it simple to select the best one for your requirements.
Websites of manufacturers: You can check reputable companies like Kingston, Samsung, or SanDisk.
Conclusion
Although it might seem minor, selecting the appropriate micro SD card for your dashcam is important to the safety and security of your recorded video. A high-quality micro SD card will ensure uninterrupted, fluid dash cam recording. Therefore, it makes sense to invest in the best one.
If you enjoy your Amazon Fire tablet for its affordability and features, you may run into storage issues. Its built-in memory fills up fast with apps, movies, and books. Adding a micro SD card for Kindle Fire lets you store more without worry. Adding a memory card is a simple solution. It lets you store more files without slowing the device down. This is ideal for users who often download media or use apps that need extra storage. Organizing your files becomes easier with an SD card for your Fire tablets.This write-up will walk you through the simple steps to use a MicroSD card in an Amazon Fire tablet and explain why expanding your storage helps.
Micro SD Cards for Amazon Fire Tablets
The small internal storage of most Fire tablets—usually 8GB or 16GB—fills up fast with media and apps. Fire Tablets Models are designed with expandable storage slots, making this upgrade seamless. Using a microSD card provides extra room and improves performance. Fire tablets vary in the SD cards they can support. Models like the Fire HD 8 and Fire 10 accept up to 1TB cards, but if you’re using an SD card for Fire 7 tablet, you get smaller storage limits. Always verify your tablet’s specifications first.
Using Micro SD card for Kindle Fire Tablet
Step 1: Insert the Card
Power off your Fire tablet. Locate the SD card slot, typically near the power button or charging port. Ensure the metal contacts face downward when placing the card. Turn on your tablet. It should detect the card automatically. If you’re using a Fire 7, be gentle as the slot is smaller.
Step 2: Format the Card
Formatting may be required for the SD card to work properly. Go to Settings, then tap Storage. Find the card in the list and select it. Choose Format and follow the instructions. Keep in mind that formatting deletes everything on your card. Always back up your data first.
Step 3: Adjust Storage Settings
Set the SD card as the default storage for apps, media, and documents. Navigate to Settings > Storage. Specify the card as the default location for photos and videos.
This setup keeps your tablet’s internal storage free for other tasks.
Step 4: File Management
Use the File Manager app to organize content. Transfer files between internal storage and the SD card or move apps if your tablet allows it.
Benefits of Using a Memory Card for Fire Tablet
Increased Storage Capacity
One big advantage of a micro SD card for Kindle Fire is extra storage. Fire tablets have limited internal space, which fills up fast if you love reading, watching movies, or playing games. An SD card gives you room to store more and avoid storage issues.
Improved Device Performance
A crowded internal storage can make your device sluggish. Shifting apps, media, and data to an external memory card can free up space for system processes, improving performance.
Cost-Effective Solution
Upgrading your tablet for more internal storage can be pricey. Adding an SD card is a much cheaper way to get more space. Micro SD cards for Kindle Fire are widely available and fit a range of budgets.
Easy to Use and Manage
After inserting the SD card, it works smoothly with the Fire tablet’s system. You can transfer files between the SD card and internal storage, choose default storage settings, and manage media effortlessly through the user-friendly interface.
Where to Buy Suitable SD Cards for Your Fire Tablet?
To get the right Kindle Fire SD Card, consider shopping at these stores:
Amazon: Since you’re using a Fire tablet, Amazon’s selection offers different capacities and speed classes, making it simple to choose one that fits.
Best Buy: Carries SD cards for various Fire tablet models, including trusted brands like SanDisk and Samsung.
Walmart: Offers SD cards for Fire tablets at competitive prices, available online and in-store.
Target: Their selection includes free in-store pickup and discounts on certain models.
Conclusion
In a nutshell, a Micro SD card for Kindle Fire expands storage and boosts performance. Following this guide, you can easily set up and manage extra space for your Fire tablet. The added storage gives you flexibility whether for apps, photos, videos, or music.Just pick a compatible, high-quality SD card with enough storage and speed. After installation, your Fire tablet will work better and offer a smoother experience.
FAQs
What SD card does Kindle Fire use?
Fire tablets, including Kindle Fire, accept microSD cards (16GB to 1TB), for extra storage. Brands like SanDisk, Samsung, and Kingston are reliable options. A Class 10 or UHS-I card ensures smooth operation.
Do I need to format a Micro SD card for Kindle Fire tablet?
Yes. Formatting ensures the card is set up correctly, letting you store apps and other content. You can choose whether to format it for external or internal storage.
How to get more storage on an Amazon Fire tablet?
To get more storage on your Amazon Fire tablet, you can:
Add a microSD card, an affordable solution to increase storage. Manage your apps and media. Move apps, photos, and videos to the SD card or Delete unnecessary files.
With Amazon’s cloud, storing and retrieving your files becomes hassle-free. Your tablet stays light, as no additional storage is used.
How many GB do I need for my Kindle?
Your Kindle Fire storage needs will vary based on usage. 8GB or 64 GB is enough for simple reading and basic browsing. If you store a lot of videos and large apps, a 128GB or larger microSD card will give you more space.
When picking a microSD card, understanding storage capacity is essential. A 2GB card might not hold as much as modern cards, but it’s still practical for storing a few photos, videos, or music on older devices. This article explains how many photos and videos can 2 GB hold and offers practical tips for using it in older or low-storage devices.
2GB Micro SD Cards
A 2GB microSD card is more than just a storage option—it’s a compact, reliable solution for many devices. Found in phones, cameras, and tablets, these cards suit devices that don’t require high-capacity storage. Modern microSDs can hold terabytes, but 2GB remains a go-to for simpler technology.
Applications of a 2GB Micro SD Card
For light storage needs, a 2GB microSD card is a practical choice. Old mobile phone models, digital cameras, and MP3 players are some of its applications. Gamers might use it in handheld consoles, while GPS devices can rely on it for maps. For anything high-resolution, opt for a card with more capacity.Older devices with limited storage requirements pair well with a 2GB microSD card. It’s a good option for vintage MP3 players, basic phones, and navigation systems. While sufficient for everyday use, it won’t handle high-resolution media effectively.
How Many Photos and Videos Can 2GB Hold?
A 2GB microSD card’s storage capacity is shaped by various factors. Images captured at higher resolutions need more space, and uncompressed formats like TIFF or RAW also consume additional storage. Compression helps reduce file size, but videos with higher bit rates and frame rates can quickly fill the card.
How Many Pics Can 2GB Store?
A 2GB storage device can hold a different number of photos depending on the file size. Here’s a general breakdown:
Image Quality
Photo Size (Up to)
How Many Pictures Can 2 GB Hold?
Standard JPEG Photos
3MB
~680+ photos
High-Resolution Photos
5MB
~400+ photos
Low-Resolution Photos
1MB
~2000+ photos
How Many Videos Can 2GB Hold?
Video files, which combine audio with high-resolution visuals, need more space than photos. Their size is influenced by the quality of the video and its duration. Let’s look at some general video file sizes:
Video Type
Size/Min
Approx. Duration of 2GB
Low Definition (LD)
8MB/min
250 minutes
Standard Definition (SD)
30MB/min
68 minutes
High Definition (720p HD)
60MB/min
34 minutes
Full High Definition (1080p HD)
100MB/min
20 minutes
Note: These figures are only averages; the actual storage capacity may differ depending on file formats, compression techniques, and other variables.
Types of 2GB Micro SD Cards
Not all 2GB microSD cards perform the same. A variety of factors contribute to the storage and speed performance of a card:
Multi-Level Cell vs. Triple-Level Cell
MLC and TLC are the two types of NAND flash memory in microSD cards.
MLC stores 2 bits per cell, making it faster and more durable. Cards with MLC flash memory generally perform better and last longer.
TLC stores 3 bits per cell, which reduces cost but makes the card slower and less durable.
While storage capacity remains the same, MLC cards generally last longer and perform better.
Speed and Class Differences
Speed class ratings tell you how fast data can be written or read from a MicroSD card. These are shown with a number inside a “C” or “U.”
Class 4: 4MB/s write speed
Class 6: 6MB/s write speed
Class 10: 10MB/s write speed
For Full HD video recording or app usage, go for higher-speed classes. For simple storage, Class 4 or 6 works.
Brand Differences
2GB microSD cards from brands come with different levels of speed, performance, and dependability. It’s always safe to choose a brand with a solid reputation for quality and strong customer service.SanDisk offers dependable cards for everyday tasks. Toshiba is known for fast, durable cards. Kingston offers quality at an affordable price.
Where to Purchase 2GB Micro SD Cards?
You can find 2GB microSD cards in various locations, such as:
●Amazon and eBay are popular online options, offering cards from various brands.
●Physical stores, such as Best Buy and Walmart, also carry them.
●For specialized needs, websites focused on cameras, gaming, or smartphone accessories often list 2GB models.
Prices vary, but these cards are generally inexpensive, with most costing only a few dollars.
Conclusion
A 2GB microSD card, while considered small by today’s standards, works well for light storage needs. It’s ideal for basic devices like feature phones, older cameras, or MP3 players. Depending on file sizes, it can hold hundreds of photos or several minutes of standard video.But, as file sizes balloon, especially with the rise in high-res images and 4K video, users who need extra storage will likely need to look at cards with capacities like 08-16-32 GB to 01 tb.Yet, by understanding its storage capacity, you can decide what fits your storage needs and device requirements.
Many modern electronic devices employ micro SD cards. These cards are small but incredibly effective storage devices. These tiny cards store documents, apps, videos, and images from smartphones to drones. However, The question of What camera uses micro SD cards comes up often. So, this write-up explains it, offering the best recommendations for you. Let’s dive in.
What Camera Uses Micro SD Cards?
Dash cam often use micro SD cards, and they’re also found in many cameras. But what cameras support micro SD cards?
Action Cameras
Action cameras are the most common type of cameras that use micro SD cards. These cameras capture sharp video. High-quality photos and videos need plenty of storage, and micro SD cards are perfect for that. GoPro cameras rely on them for HD video shooting.
Digital Cameras
Digital cameras also frequently use micro SD cards, particularly point-and-shoot and mirrorless types. Although most utilize conventional SD cards, some of these cameras support micro SD cards directly or through a micro SD to SD card adaptor. These cameras, like the Sony Alpha series, are ideal for travel, vlogging, and daily photography.
Security Cameras
Micro SD cards are occasionally also used by security or surveillance cameras to store video recordings. Locally stored video from these cameras can be viewed on a PC or through an app.
Depending on the model, these cameras may accept micro SD cards with varying capacities and speeds.
Camcorders
While many camcorders use full-size SD cards, some action or pocket camcorders have slots for mini SD cards. You may record video with these small devices and save it to your micro SD card.
How to Select the Best Micro SD Card for Your Camera?
For optimal camera performance, focus on these key specs when choosing a micro SD card:
Speed Class
Speed class tells you how fast data is written to the card, important for crisp photos and smooth videos.
Class 10: With the lowest write speed of 10 MB/s, it’s found in many cameras. Works for HD video and continuous shooting.
UHS-1: Speed up to 104 MB/s, good for high-quality photos and 4K footage.
UHS-3: Reaches 312 MB/s, perfect for fast shooting and HD videos.
V30/V60/V90: These video speed ratings matter. V30 is the minimum for 4K, while V90 supports 8K recording.
Capacity
1MB-8GB: Ideal for cameras that require a little storage for Functional test, or power-on test.
16GB-32GB: Suitable for cameras that capture fewer images or video and are used for shorter periods.
64GB-128GB: Ideal for cameras used for longer-term monitoring or those that capture more frequent images or video.
256GB or More: Best for cameras that record large amounts of 4K video or require extensive photo storage
Compatibility
Confirm the micro SD card works with your camera. Not every camera supports large or high-speed cards, so verify the specs ahead of time.
Durability and Reliability
Temperature Resistance:> Look for cards rated for extreme conditions if using your camera outdoors.
Waterproof, Shockproof, and X-Ray Resistance: >For outdoor or rugged use, choose a card with added durability features.
Flash Memory Type
SLC (Single-Level Cell): Fast and durable but expensive, ideal for professional use.
MLC (Multi-Level Cell): A good balance of performance and price, widely used for general camera applications.
TLC (Triple-Level Cell): Slower but more affordable, suitable for everyday use in consumer-level cameras.
QLC(Quad-level Cell): Gives high storage capacity at a budget-friendly price, though it’s slower and less durable. It’s perfect for general-use consumer electronics.
Brand and Warranty
SanDisk, Samsung, and Lexar are safe choices for dependable products and excellent customer service.
Price vs. Performance
Higher-end cards often deliver higher speeds and more storage, but there’s no need to spend on what you won’t use. A Class 10 or UHS-1 card is perfect for everyday tasks. For 4K video or continuous shooting, go for UHS-3.
Where to Purchase the Best Micro SD Cards for Cameras?
Choosing a reliable micro SD card is crucial for quality, performance, and fair pricing. Here are some trusted options to ensure you get genuine products:
1. Official Brand Websites
SanDisk, Samsung, and Kingston’s websites are the best places to get genuine micro SD cards with warranties and reliable support.
2. Online Marketplaces
Amazon: Known for variety and competitive prices. Stick to Amazon Verified Sellers to avoid counterfeits.
Best Buy and Newegg: Trusted platforms offering frequent discounts and reliable delivery.
B&H Photo Video: Perfect for photographers, with tailored recommendations and specialized cards for professional use.
3. Photography and Outdoor Specialty Stores
Adorama and REI are excellent choices for photographers and adventurers. These stores stock durable micro SD cards that withstand harsh conditions, making them ideal for outdoor or professional use.
4. Local Electronics Shops
For last-minute needs, local electronics stores can be a convenient option. Just ensure you check the card’s authenticity and verify its warranty before purchasing.
5. Wholesale Clubs
For multiple micro SD cards, consider Costco or Sam’s Club for their bulk pricing.
6. Directly from Camera Manufacturers
Brands like GoPro and TrailCamPro sell micro SD cards optimized for their cameras. Buying directly ensures compatibility and reliable performance for specific models.
Pro Tips
Check Compatibility: Make sure the card matches your camera’s requirements.
Buy from Trusted Sellers: Avoid third-party sellers with poor reviews.
Look for Deals: Take advantage of seasonal sales and bundles.
Inspect Packaging: Authentic cards always come in secure, branded packaging.
Sticking to reputable sources ensures you get genuine products that deliver reliable performance for your cameras.
FAQs
What camera uses micro SD cards?
Micro SD cards store visuals in devices like cameras, drones, and camcorders.
Can you use a microSD with adapter in camera?
Yes. A camera that accepts SD cards can use a microSD card with an adapter.
What class SD card for GoPro?
Use a U3 microSD card for GoPro to handle 4K video recording with smooth performance.
Does GoPro use micro SD card?
Yes, GoPro uses microSD cards to store videos and images, with the appropriate speed and capacity needed for different recording types.
If you like hunting and photographing the beauty of nature, e-games, and trail cameras are your best tools. They allow you to observe animals and their behavior without upsetting them. But, no matter how advanced your camera is, the SD cards you select will impact its functionality. An SD card holds all your camera’s data, making it indispensable. Opting for a high-quality one ensures quick transfers, secure storage, and reliable performance. So, understanding what to prioritize is key if you’re looking for the best SD cards for trail cameras or SD cards for game cameras. Let’s explore everything that matters most.
Difference Between Game Camera and Trail Camera
The terms “game camera” and “trail camera” get mixed up a lot, though they are designed for specific uses. They’re both meant for outdoor settings, typically by hunters or those studying wildlife, but their goals can differ.
Game Camera
A game camera helps hunters monitor wildlife. It helps track animal behavior and movements by providing high-quality footage. These cameras are set up in areas where hunters want to learn about animal movements. Many have useful features like long battery life, better low-light performance, and wireless transfer capabilities.
Trail Camera
Trail cameras are placed along nature trails or in natural spots to record wildlife through images or videos. They help with wildlife observation, studying behavior, or research. Their broader features than game cameras include wider lenses and improved durability for harsh weather. Some are also used for outdoor security or adventure tracking.
How to Select the Best SD Card for Game Cameras and Trail Cameras?
You need to consider different aspects that are crucial to you when you are looking for the best SD Card for a trail camera or game camera. Cellular connectivity, sensitivity range, trigger speed, and quality are the most important factors to consider when selecting a new SD card for trail camera.
Speed
Quantified by Class or UHS (Ultra High Speed) ratings, the SD card’s speed is crucial if your camera produces high-quality images and video. The majority of game cameras and trail cameras are compatible with Class 10, a standard for contemporary SD cards with a minimum write speed of 10 MB/s. Compared to Class 10, UHS-1 offers faster speeds of up to 104 MB/s. UHS-3 cards work best with cameras that capture 4K or high-definition footage.
Capacity
The capacity of the SD card determines how many images or videos it can store. Capacity is crucial because game and trail cameras can record hundreds or even thousands of pictures. It also depends on how frequently they are activated.
For cameras that are used for shorter periods and only take a few pictures or videos daily, 16GB to 32GB are perfect.
64GB–128GB: Larger capacity cards are advised for cameras set up for long-term monitoring. They are also for recording many pictures and videos.
256GB or more: A high-capacity SDHC card for trail camera may be necessary if you’re shooting 4 K videos or taking large batches of pictures to ensure enough room.
Flash Format
The flash format affects speed and longevity, indicating how they are comparable.
SLC provides the fastest speeds and extended lifespan, but the cost is higher.
MLC is praised by most users for its cost-to-performance ratio, especially for game and trail cameras.
TLC is slower but more reasonably priced. There might be better options for cameras that take many HD pictures or videos.
Cost
In terms of cost, there is no universal solution. More expensive SD cards with larger capacities and higher speeds will cost more. Game and trail cameras don’t always need top-of-the-line SD cards. A more affordable Class 10 card is enough for stills and lower-resolution videos. Purchasing a UHS-1 or UHS-3 card is worthwhile. It is best if your game or trail camera needs to record high-definition video or take frequent snapshots. SDHC card for trail cameras is a top pick due to its shock resistance and waterproofness to withstand outdoor use.
Top SD Cards For Trail And Gaming Cameras
After discussing the technical aspects, let’s examine some top SD cards for trail and gaming cameras. So you can easily pick best SD card for game camera or trail camera.
Ultra-Pro SanDisk (UHS-1): Ideal for taking pictures and recording HD videos. The capacity range is 32–256GB. SanDisk is renowned for its exceptional dependability. It is also famous for the Extreme Pro, which provides game cameras with excellent speed and capacity.
Professional Lexar 1000x (UHS-3): Best for 4K video and fast speed. It has a 32GB–128GB capacity. Trail cameras that take long bursts of sharp images or 4K videos are ideal for this card.
Samsung EVO Select (UHS-1): A cost-effective option for standard HD photos and video. 64GB to 128GB of capacity. It offers a reasonable price point along with good speed and dependability.
Canvas React Kingston (UHS-3): Best uses are 4K video recording and extended outdoor use. Capacity range: 64–256 GB. This is the best option for demanding cameras that need durability in harsh weather conditions and high-speed transfers.
Where Can I Buy The Best Micro SD Cards For Game And Trail Cameras?
You can pick best SD card for game cameras and trail cameras online or at your local electronics store.
Reputable websites like BandH Photo Video, Best Buy, and Amazon offer a wide range of SD cards at different price points.You should always look at reviews and ratings to ensure you get a good product that fits your needs.
Conclusion
Selecting the best SD card for game and trail cameras is easy. With the information discussed above, you can easily make your decision. For extra safety, think about purchasing an SD card. When the unexpected happens, a backup makes all the difference. Don’t forget to let us know what’s your pick.
In today’s mainstream CPUs or NAND Flash, there are often hundreds of billions of transistors packaged inside. What exactly are these transistors? And what is their construction like? Broadly speaking, transistors are mainly divided into two types: BJT bipolar junction transistors and FET field-effect transistors. Currently, most of the transistors packaged in chips are MOSFETs, which are a type of field-effect transistor. This is its circuit symbol.When we apply a high voltage to its gate, the drain and source can conduct, but when we apply a low voltage, it will cut off, which is equivalent to being disconnected.
Next, let’s look at its construction. This is an early planar transistor, mainly used for chip processes ranging from 10,000 nanometers to 22 nanometers. Now, let’s talk about how it works. These are its drain and source, which are essentially two pieces of n-type semiconductors with a high concentration of free electrons. In the middle is the substrate, which is essentially a p-type semiconductor with a low concentration of free electrons. If we connect the drain and source with electricity at this time, it cannot conduct.Because although the p-type substrate has a certain amount of electrons, the concentration is extremely low and far from enough to build an effective electrical conduction path between the source and drain. At this time, people added an insulating layer on the substrate, and then added a highly conductive metal plate on the substrate as the gate. In this way, when we apply voltage to the gate, the electrons in the p-type substrate will be attracted to the vicinity of the insulator, and the concentration of free electrons at the junction of the substrate and the insulator will become higher. At this time, when we connect the source and drain with electricity again, it will conduct. Because an effective electrical conduction path has been built between the source and drain.
For this planar transistor, the chip process refers to the length of its gate. For example, if its gate length is 180 nanometers, then it is a chip with a 180-nanometer process. However, when the chip process is reduced to 22 nanometers and below, due to the short-channel effect, the distance between the drain and the source is too short, and the drain electric field will interfere with the gate’s control over the channel, leading to an increase in leakage current. This invisibly increases power consumption, and the channel is difficult to shorten further.
Therefore, when entering the era of three-dimensional transistors, such as FinFET and GAAAFET transistors, the “nanometers” in chip manufacturing no longer refer to the gate length of the transistor. The term “nanometers” is more of a marketing term. For example, in a 3-nanometer process chip, the gate length of its transistors may be between 15 and 20 nanometers. You can see the difference in construction between them and conventional MOSFETs. The conventional construction direction is horizontal, while the construction direction of three-dimensional transistors is vertical. Next, let’s look at the construction of FinFET and GAAAFET transistors. First, let’s talk about FinFET. The FinFET transistor was invented by Professor Hu Shengming from Taiwan Province and is mainly used in the 22-3 nanometer process nodes. Because its channel is protruding and looks like a fish fin, it is called a fin transistor. This type of transistor has solved the short-channel effect well, but it is still essentially a MOSFET. The working principle of the fin transistor is similar to that of the planar transistor. The bottom is a large substrate, which is a p-type semiconductor. Its two sides are covered with two insulators, and above are two N-type semiconductors as the source and drain. Then, the three sides are surrounded by insulators, and the top is a highly conductive metal as the gate. When we electrify the gate, all three sides of the p-type substrate will be attracted by the electric field, providing better gate control.
Despite the improved gate control provided by three-dimensional structures, for extremely small sizes, such as below three nanometers, electric field interference and leakage current are still hard to avoid. Therefore, the ingenious humans invented the GAAAFET transistor, also known as the gate-all-around transistor, which is mainly used below three nanometers. You can take a look at its structure: the bottom layer is the substrate, followed by two layers of oxide, which can be seen as the tray of the transistor. Above that are three very thin nano channels, composed of n-type and p-type semiconductors. Then, a layer of oxide (insulating material) is wrapped around the four sides of its p-area, and a piece of highly conductive metal is added as the gate. Compared to the three-sided gate of FinFET, GAAAFET achieves a 360-degree gate wrap, hence the name gate-all-around transistor. This further strengthens the gate control capability, and these three channels essentially belong to one transistor. Devices like Central Processing Units (CPUs) and Graphics Processing Units (GPUs) often need to handle large amounts of data and complex computational tasks, which requires the transistors that make them up to have a strong current driving capability for rapid signal transmission and processing.
GAAFET transistors, due to their multi-channel design, can significantly enhance the driving capability of the transistor. Without significantly reducing the gate length, FinFET and GAAAFET transistors increase gate control by wrapping around the gate from multiple angles, reducing the unit area occupied by the transistor. This allows for more transistors to be integrated within the same area, effectively shortening the gate length. This is my interpretation of these three types of transistors, and I hope it helps you understand them better.
Flash memory is the core of storage for solid-state drives, USB drives, and memory cards. It can typically store hundreds of gigabytes of data in a space the size of a fingernail. It is an invention that is as renowned as the Nobel Prize. Flash memory storage relies on floating-gate MOSFETs. Before discussing floating-gate transistors, let’s briefly introduce MOSFETs, as floating-gate transistors are an improvement based on MOSFETs. The principle of MOSFETs is quite understandable. These three black areas are metal conductors, and the n-type semiconductors on both sides contain many free electrons. If we apply electricity to the n-type semiconductors, they can conduct, acting like a piece of wire. The p-type semiconductor in the middle has very few free electrons, so when we apply voltage to the base, it is cut off because the concentration of free electrons in the p-region is too low to form a conductive channel.
To make the MOSFET conduct, we can apply a voltage to its gate, attracting the electrons in the p-region towards the gate.
Because there is a layer of silicon dioxide between the gate and the p-region, which is insulating, free electrons cannot pass through under normal circumstances. So, when we apply voltage to the gate, the free electrons in the p-region gather near the insulating layer, forming a conductive channel, and thus it conducts.
Floating-gate mosfets
However, when we remove the gate voltage, the electrons gathered near the insulating layer disperse, and no conductive channel is formed. Since no current flows, the MOSFET is cut off at this time. This is the circuit symbol for a MOSFET. Simply put, when we apply a high voltage to its gate, it will conduct, and when we apply a low voltage, it will be cut off.
Floating-gate MOSFETs are very similar to MOSFETs, except for an additional bar in the middle, which represents the floating gate. Since they are both MOSFETs, their structures are similar. A floating-gate MOSFET has an additional conductive floating gate layer added to the oxide layer of a MOSFET, allowing it to store information. Let’s talk about how to write information first. If we apply a high voltage of 20 volts to the gate and 0 volts to the substrate, some of the free electrons in the channel will be attracted to the floating gate layer. Even if we then power off, the free electrons will still be stored in the floating gate layer because the floating gate layer is insulated by silicon dioxide layers above and below, and the free electrons simply cannot escape. This is how information is stored, with the charge stored being considered a logical zero.There is also a question about how electrons can pass through the tunnel oxide layer, which is also an insulating layer. This is actually due to the tunneling effect. For example, a silicon dioxide oxide layer is normally insulating, but if we apply a voltage large enough, greater than 10 million volts per centimeter, electrons can pass through this insulating layer. This is the tunneling effect. When we apply a 20V high voltage to the gate, due to the thinness of the tunnel layer and the high voltage per unit thickness it withstands, electrons from the p-region are attracted. It is important to note that at this time, do not apply voltage to the drain, or a sub-threshold conduction channel will form, and electrons will flow in this manner, which would hinder the occurrence of the tunneling effect.
When we apply a low voltage of 10 volts, electrons cannot pass through the insulating layer, just like a conventional MOSFET. Understanding the principle of flash memory writing makes it easy to understand its parameter principle. We just need to apply a high voltage of 20 volts to its substrate while applying 0V to the gate. At this time, the free electrons imprisoned in the floating gate layer will be attracted out, and the data will be erased. Erasing is writing a logical one. Storing one bit of information requires only one floating-gate MOSFET. To store 1GB of information, at least 8.5 billion floating-gate transistors are needed. How do we control so much information?
How does nand flash work
You can see this is a flash memory block that can store 16 bits of information. The middle ones are floating-gate MOSFETs that store information. The top and bottom ones are conventional MOSFETs that play a controlling role here. The horizontal ones are its word lines, connecting the gates of these rows of MOSFETs. The vertical ones are its bit lines. Its writing minimum unit is a page. A page is a row. When we want to write, we first need to erase all the data in this entire block, which means releasing the electrons stored in the floating gate layer, and all storage units will become logical ones.
How do we write by page? For example, if we want to write the page “word1,” we need to apply 20 volts of high voltage to the radiation MOSFETs of this page, and other MOSFETs should not be given high voltage. In this way, only the data of this page with 20 volts of high voltage can possibly be written. If we want to store a charge and write 0, we write 0 to its corresponding bit line, so free electrons will be attracted to the floating gate layer, and this bit will be written as logical 0. If we want to write 1, it’s very simple because we need to erase before writing, and after erasing, the data is all 1. We just need to keep the data unchanged. For example, if we want to write 1 to this bit, we write a high voltage to its bit line, which will hinder the tunneling effect. So, free electrons will not be captured by the floating gate layer, and it will remain logical one unchanged. The minimum unit for writing data is a page of data, and the minimum unit for erasing data is to erase the entire block. We need to give all of them zero volts and then apply a high voltage of 20 volts to the substrate.
You might be curious why the minimum unit for erasing is an entire block of data. Look at its cross-section, and you will understand. All storage units of this flash memory share a substrate. Just by applying a high voltage of 20 volts to the substrate, the operation of erasing the entire block of data can be completed. The minimum writing unit is a page because the gates of the MOSFETs on this page are connected together. This block of data can store 16 bits of data. One page is 4 bits of data, and a real flash memory page has 65,536 storage units per block. There are 512 pages in the data, so a block of flash memory data can store more than 33 million data points. This is what we call 4MB of data. Even if we want to write one bit of data, we also have to erase these more than 33 million bits of data before we can write.A block of data is 4MB, and to make up 1GB, you would need 256 flash memory blocks. The packaging size of the chip is standardized. To package enough storage units within the chip, the storage units must be made small enough to fit more of them in. However, as they are downsized, many issues arise. For instance, the tunnel oxide layer also becomes thinner. Due to the process of erasing and writing, electrons need to pass through the oxide layer repeatedly. If this happens too many times, the tunnel oxide layer can become damaged and fail to block the electrons, leading to data not being well preserved.
What is 3d nand flash
To address this issue, humans invented 3D NAND flash, which eliminates the need to increase the number of storage units by downsizing MOSFETs. This is a 4-layer flash that stands the conductive channels upright, with horizontal pages of data. This area represents a block of data, and the middle contains all its storage units. So far, 3D NAND flash memory has achieved a stack of 232 layers, with a storage density of about 15GB per square millimeter. By using 3D stacking, not only can the unit capacity be increased several times, but also, because of the three-dimensional technology, the size of the storage units does not need to be reduced. As a result, the number of write-erase cycles is increased by more than tenfold. This is my understanding of flash memory technology, and I hope it helps your comprehension.
Survival in the Cracks – The Beginning of Domestic Storage
In the storage industry, high technical barriers, large capital investments, and long R&D cycles have always been the three core thresholds restricting new players.Since the 1980s, the memory chip market has gradually formed a “tripolar pattern”: Samsung, SK Hynix, and Micron have occupied the main share, firmly controlling the core technology and market pricing power of memory chip manufacturing. Samsung’s 3D NAND, SK Hynix’s LPDDR, and Micron’s enterprise-level SSD solutions have monopolized the upstream and downstream of the consumer and enterprise markets in China.Faced with the monopoly of international giants, the difficulties faced by domestic storage in the initial stage can be summarized as “lacking technology, lacking talent, lacking funds, and lacking trust”.
Lacking Technology: In the field of memory chip design and manufacturing, domestic enterprises started late, and in the early stage, they were mostly concentrated in the low-end market, lacking advanced process and product design capabilities. The lack of technological accumulation made domestic manufacturers unable to compete with international giants like Samsung in the mainstream market.
Lacking Talent: The core technology R&D of the memory chip industry requires a large number of high-end talents, and at that time, China’s technical reserves and educational resources in the semiconductor field were still unable to meet the demand.
Lacking Funds: The R&D and mass production of memory chips require huge capital support, and the R&D investment of international giants is often dozens or even hundreds of times that of domestic enterprises. Samsung’s R&D investment in the storage field exceeds 10 billion US dollars every year, while the R&D budget of domestic manufacturers is only a fraction of it. At the same time, the memory chip industry has a significant economies of scale effect, and domestic enterprises with insufficient production capacity face great challenges in cost control and market competitiveness.
Lacking Trust: In the early market promotion, domestic storage brands were often regarded as low-end substitutes by consumers. Due to limited technical capabilities, the performance, stability, and durability of early products were significantly different from international brands. This brand trust crisis further restricted the breakthrough of domestic manufacturers in the high-end market.
Most early domestic SSDs relied on imported chips for packaging and production, with representative manufacturers such as Galaxy, Team, and Maxsun. Their products were often labeled as “low-end substitutes”. In early user feedback, domestic SSDs were “full of problems”.
Short Life: The early versions of flash memory particles had unstable life, often damaged after two or three years of use.
Poor Performance: Limited by the optimization capabilities of controllers and firmware, the continuous writing speed and random read-write performance of early SSDs were far inferior to international giants.
Uneven Quality: Some products even had large-scale repairs due to non-uniform production standards.
In 2015, a domestic storage company tried to launch its own branded SSD, but due to the use of outdated process technology, the product speed could not even catch up with Samsung’s mid-range model three years ago.
An engineer recalled: “Before the release, we were full of hope, but after the release, the reputation was negative, and even the advertising slogan became a joke in the industry.” Such failure cases were not uncommon at the time.However, domestic brands did not give up because of this. They gradually accumulated experience in the early trials and errors, laying the foundation for subsequent development.
Lurking: Policy Promotion and Technological Accumulation
At the same time, the “invisible hand” began to layout.
In 2014, the State Council issued the “National Integrated Circuit Industry Development Promotion Outline”, proposing to achieve autonomous and controllable goals in key areas of integrated circuits by 2030, with memory chips listed as one of the priority support directions. Under this policy background, the domestic storage industry ushered in unprecedented development opportunities.
Establishment of National Fund
To promote the development of the semiconductor industry, the National Integrated Circuit Industry Investment Fund (referred to as the “Big Fund”) was established in 2014, with a total fundraising of 130 billion yuan. The Big Fund provided key capital support for domestic storage manufacturers, especially the continuous investment in Yangtze Memory, which laid the foundation for its technology research and development and capacity expansion.
Local Government Support
In addition to national policies, local governments also support the development of local storage industries by setting up special funds, providing tax incentives, and talent introduction plans. For example, Yangtze Memory’s headquarters is located in Wuhan, and the Hubei provincial government has provided a number of policy supports for its project construction, helping it to start quickly in terms of funds and resources.
Technical Blockade Stimulates Innovation
The intensification of technology competition across the ocean has made Chinese enterprises face stricter technical blockades. This external pressure has instead stimulated the independent innovation motivation of domestic manufacturers, making them have to take a different technical path from international giants.
Establishment and Technical Path Selection of Yangtze Memory
As the leading enterprise in the domestic storage industry, Yangtze Memory has established a strategic direction of “starting from basic technology research” since its establishment in 2016.
The early goal of Yangtze Memory was not high, but focused on the technical verification of a 32-layer 3D NAND chip.Although this product’s performance is hard to compare with Samsung’s 64-layer chip at the same period, its significance lies in that it is the first time for Chinese storage enterprises to achieve autonomous control from design to manufacturing.
In 2018, Yangtze Memory released the world’s first Xtacking architecture technology. This technology not only improves the performance of memory chips but also significantly reduces manufacturing complexity and cost by separating the storage units and peripheral circuits and integrating them with vertical interconnection technology. This technological breakthrough has made Yangtze Memory shine in the global storage market.However, at the beginning of technology research and development, the challenges were huge.
In 2017, when the first generation of Xtacking chips was trial-produced, the yield was very low, and the product was almost difficult to mass-produce.
An engineer mentioned: “At that time, the lights of the whole building were often on until two or three o’clock in the morning, and many people even worried whether this technical direction was feasible.”However, after three years of continuous optimization and attempts, Yangtze Memory launched its first self-developed 64-layer 3D NAND flash memory chip in 2019 and quickly applied it to the consumer SSD market.
Although there is still a gap in performance and reliability compared with international brands such as Samsung, its cost performance advantage and local supply chain strategy have won a certain market share for it, and also made domestic storage have the foundation to compete with international giants for the first time.
Breaking Through: Technological Breakthroughs and Market Expansion
In the development process of Yangtze Memory, the Xtacking architecture is the most important technological milestone. The introduction of this technology not only marks Yangtze Memory’s transition from technological catch-up to independent innovation but also changes the global NAND flash memory industry’s technological competition landscape.
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The Xtacking architecture adopts a separate design for storage cells and peripheral circuits, efficiently integrating the two parts through vertical interconnection. This technological path brings many advantages.
Performance Improvement: Xtacking optimizes signal transmission speed, achieving higher random read-write speeds and lower latency. Compared with traditional designs, its performance improvement can reach more than 20%.
Manufacturing Efficiency: This architecture simplifies the production process, allowing wafer manufacturing and packaging testing to be carried out simultaneously, significantly shortening the production cycle.
Design Flexibility: Storage cells and peripheral circuits can be optimized separately, supporting higher-density storage cell stacking and increasing chip storage capacity.
With the support of Xtacking technology, Yangtze Memory quickly launched multiple generations of products.
In 2019, the first 64-layer 3D NAND chip was released, laying the foundation for the mass application of domestic NAND products.In 2020, the 128-layer 3D NAND was launched, reaching a global advanced level.
In 2022, the 176-layer 3D NAND was successfully developed, beginning to enter the high-end storage market and directly competing with Samsung and other international giants.These technological breakthroughs have enabled Yangtze Memory to have real competitiveness in the global market for the first time and have created favorable conditions for the rise of its retail brand, Zhitai.
Unlike early domestic SSDs, Zhitai has achieved a qualitative leap in quality, performance, and after-sales service.When the Zhitai SSD product TiPlus5000 was released, the market response was positive. Although it is still not as fast and performant as Samsung, its price is more attractive, and the cost-performance advantage is obvious.
In 2023, Zhitai released the TiPlus7100 series. This product is equipped with Yangtze Memory’s 128-layer 3D NAND chip, with continuous read-write speeds reaching 7100MB/s and 6500MB/s, not only catching up with Samsung’s flagship products but also performing excellently in terms of life and stability.
Once released, this product caused a warm response in the domestic market and became a star product on the JD platform.
In 2024, the performance of Zhitai during Double 11 became an important symbolic event in the development of the domestic storage industry:online SSD category Double 11 promotion total transaction amount (GMV) and sales double champion!
Zhitai’s JD transaction amount increased by 40% year-on-year, and total sales increased by 15% year-on-year. Among them, Zhitai TiPlus 7100 became one of the most popular explosive SSD products on the JD platform.
Specifically, the main reasons for Zhitai to surpass Samsung during Double 11 slaes promotion can be
Attributed to the following key factors:
Significant Price Advantage: During the 2024 Double 11 period, Zhitai attracted a large number of consumers through direct discounts and full reduction activities. During Double 11, many international first-line brands did not have price reduction measures, and even a certain brand had the operation of raising prices first and then returning to the original price.
Technology Empowers Promotion: Through social media, live streaming, and other forms, the advantages of Xtacking technology are transformed into selling points that consumers can perceive (such as faster transmission speeds, longer service life).
Service and Channels: Through JD’s self-operated and official after-sales support, the problem of low consumer trust in early domestic brands was solved.
Behind these data is a comprehensive breakthrough of Yangtze Memory and Zhitai in technology, brand, and market.
Rise: The Logic Behind and Industry Significance
The fundamental reason for Yangtze Memory’s rapid rise is its persistence and breakthrough in technological innovation.
The release of the Xtacking architecture has broken the traditional design thinking of the storage industry, raising the performance and manufacturing process of NAND flash memory to a new level. In the global storage industry, the core of NAND flash memory technology is dominated by companies such as Samsung, Micron, and Intel, and domestic storage has always been in a technological catch-up situation.
However, Yangtze Memory has successfully filled the technological gap through independent research and development and technological breakthroughs, achieving the goal of “autonomous control.” From the successful development of 64-layer, 128-layer, to 176-layer 3D NAND flash memory, Yangtze Memory has not only solved the technical shortcomings of domestic storage but also broken the technological blockade of international giants, proving that China has the ability to compete with the world’s top enterprises in the field of semiconductor storage.In addition, its technology accumulation and rapid iteration strategy are also crucial.
In just a few years, Yangtze Memory has continuously optimized the Xtacking architecture, introduced new products, and launched multiple generations of products. This ability to rapidly iterate technology allows it to quickly adapt to market demand changes, ensuring product competitiveness. At the same time, Yangtze Memory’s large-scale production has also helped it maintain a technological lead, ensuring domestic market supply and competitiveness.
Policy Support and Industry Environment
The “invisible hand” has been paying increasing attention to the semiconductor industry. From the establishment of the “Big Fund” to the local government’s support for the storage industry, national policies have provided great financial and policy support for domestic storage manufacturers. These supports not only help enterprises with technology research and development but also provide a more relaxed market environment for them.In addition to national policy support, local governments have also played an active role in promoting the development of the semiconductor industry.
As a key project supported by Hubei Province and Wuhan City, Yangtze Memory has received full support from local governments in terms of funds and talent introduction. This close cooperation between government and enterprises has prompted the domestic storage industry to complete the leap from technological catch-up to leadership in a short period.Moreover, the collaboration of the upstream and downstream of the industry chain has also provided a solid foundation for the development of domestic storage. The continuous improvement of materials, equipment, and packaging testing links has greatly enhanced the competitiveness of the domestic storage industry.
From the initial technological lag and market downturn to breaking through the encirclement through policy support, technological innovation, and brand promotion, domestic storage enterprises have gradually become an important force in the global storage industry. The success of Yangtze Memory and Zhitai marks the technological breakthrough of the domestic storage industry, but future competition is still full of unknowns.
On November 27th, Samsung Electronics announced routine personnel changes for the 2025 class of presidents, totaling 9 individuals, with 2 being promoted to president and 7 experiencing role changes.
Samsung, in crisis, has implemented a reorganization of its presidency, focusing on the memory semiconductor business.
Moving forward, the memory business will be directly managed by the CEO and vice chairman, without a separate president position.
In the regular 2025 president reshuffle, Samsung Electronics appointed Vice Chairman and head of the Device Solutions (DS) division, Jeon Young-hyun, as CEO, aiming to revive the semiconductor business.
The Device Experiences (DX) division remains under the leadership of CEO and Vice Chairman Jong-hee Han, with Vice Chairman and head of the Business Support Task Force (TF) Hyun-ho Jeong retaining his position, solidifying the vice chairman system.
The personnel changes include: transforming the memory division into a system directly under the CEO’s jurisdiction, replacing the foundry (contract manufacturing) business leader, and appointing an experienced and mature CEO to manage new businesses. To overcome uncertain internal and external business environments and achieve new leaps, a personnel reform has been announced, including the allocation and mining of tasks.
Additionally, to strengthen semiconductor technology competitiveness and renew the organizational atmosphere, we have established a president-level CTO position in the foundry division and a president-level management strategy position directly under the DS division, empowering senior presidents with authority. Challenges such as brand and consumer experience innovation have been introduced to improve the company. The company announced a focus on enhancing its medium and long-term value.
Among them, Jinman Han, Vice President of the DS Americas (DSA) division responsible for the semiconductor business, has been appointed as the president of the foundry business division. Jinman Han has served as the head of DRAM and flash memory design teams, SSD development teams, and the Strategic Marketing Office, and was appointed as the head of the Americas region at the end of 2022, leading the semiconductor business at the forefront. With his combination of technical expertise and business acumen, along with extensive experience dealing with global customers, it is expected that he will enhance the competitiveness of the foundry business through process technology innovation and strengthening networks with key customers.
Kim Yong-gwan, a member of the Business Support Special Task Force (TF) and vice president, has been promoted to the position of President of Management Strategy for the DS division. Kim Yong-gwan, after working in semiconductor planning and finance, and in the Strategy Group and Management Diagnostics Group of the Future Strategy Office, moved to the Business Support TF in May, responsible for semiconductor support, and is expected to play a leading role in the early recovery. It is reported that Samsung has indicated an intention to enhance semiconductor competitiveness through this forward deployment.
Vice Chairman Jeon Young-hyun, who is also the head of the DS division, serves as Samsung Electronics’ CEO and head of the DS division, memory business division, and SAIT President.
The CEO of Samsung Electronics has traditionally been a vice chairman. In particular, the DS division is generally led by executives such as Chang Kyu Lee and Ki Nam Kim.
Under the leadership of former DS division head Chang Kyu Lee, he unusually held a president-level position, but in May of this year, Vice Chairman Jeon Young-hyun took over the organization again and elevated the status of the president.
Samsung Electronics is expected to shift from a single CEO system led by the DX division head (Vice Chairman) Han Jong-hee to a dual CEO system, including the former vice chairman, thereby enhancing the competitiveness of the semiconductor business. Samsung Electronics explained that the reason for restoring the two-person system of CEO and vice chairman is “to establish a business responsibility system for each division.”
Nam Seok-woo, CEO of the Global Manufacturing and Infrastructure Headquarters of the DS division, has been transferred to the position of Chief Technology Officer (CTO) of the foundry division.
It is noteworthy that a direct system with the CEO also serving as the head of the business division has been established.
Most importantly, as Samsung Electronics’ memory division has ceded leadership in the high-bandwidth memory (HBM) and other artificial intelligence (AI) memory markets to competitors, a seasoned senior leader seems to have issued a special command to directly lead the division.
Jong-hee Han, Vice Chairman and head of the DX division and Home Appliances (HA) division, will also serve as the chair of the newly established Quality Innovation Committee.
This is seen as a determination to fundamentally prevent quality disputes over Samsung Electronics’ products, in light of recent quality controversies surrounding the Galaxy Buds.
Lee Young-hee, head of the Global Marketing Office and Global Brand Center of the DX division, has been appointed as the chair of the Brand Strategy Committee.
Wonjin Lee has been appointed as the head of the Global Marketing Office of the DX division. Wonjin Lee, a Google advertising and services business expert consultant, resigned from his position as the head of the service business team in the Mobile Experience (MX) division at the end of last year and will return to the management frontline after a year, serving as the head of the global marketing department, overseeing marketing, branding, and online business.
Koh Han-seung, CEO of Samsung Bioepis, has been transferred to the position of head of Samsung Electronics’ Future Business Planning division.
Park Hak-gyu, head of the Management Support Office of the DX division, has been transferred to the position of president, responsible for Samsung Electronics’ business support TF.
Samsung Electronics usually appoints presidents in early December, but this year, like last year, it was advanced by about a week.Previously, Samsung Electronics Chairman Lee Jae-yong stated in his final remarks at the second trial on November 25th, “I am well aware that there has been a lot of concern about the future of Samsung recently, and the reality we are facing now is more difficult than ever, but this is a difficult situation.
I will definitely overcome this and take a step forward.” He continued, “Please give us the opportunity to overcome this difficult situation and become a Samsung loved by the people.”
Therefore, following the personnel changes of the chairman, there is a high possibility of executive personnel and organizational restructuring in the near future.
Due to unfavorable internal and external situations, the scale of executive promotions is expected to be reduced compared to previous years.Samsung Electronics plans to complete personnel and organizational restructuring and hold a global strategy meeting in mid-December to discuss next year’s business plans.
Hynix Q3 Financial Report: Revenue in the United States Reaches 64%, China Decreases to 24%.
Unlike semiconductor equipment manufacturers such as ASML, which are significantly affected by fluctuations in China, SK Hynix’s prospects appear optimistic, thanks to strong HBM demand in the United States.
According to South Korean media outlet newdaily, citing its quarterly report published on November 15th, the company’s sales in the United States hit a historical high in the third quarter as HBM3e is fully supplied to NVIDIA, and it is expected to maintain strong momentum throughout next year.
The report shows that the United States accounted for 64% of SK Hynix’s third-quarter sales, increasing by 5 percentage points from the previous quarter and 17 percentage points year-on-year, setting a historical high.
In monetary terms, in the third quarter alone, SK Hynix sold memory worth 11.327 trillion won (approximately $8.7 billion) to the United States, slightly less than the total sales in the United States in the first half of this year.
According to newsdaily, there is growing anticipation that SK Hynix’s sales in the United States will be even higher in the fourth quarter and next year, as NVIDIA’s upcoming Blackwell is expected to drive a surge in HBM supply starting from this quarter.As previously reported by Reuters and South Korean media ZDNet, NVIDIA CEO Jensen Huang requested SK Hynix to advance the supply of HBM4 by six months.
The company stated in October that it plans to deliver chips to customers in the second half of 2025.According to ZDNet, to further capitalize on opportunities in the U.S. market, the memory giant established a new subsidiary in Indiana in the third quarter after securing funding under the CHIPS Act to build an AI memory advanced packaging production facility in the United States.
According to SK Hynix’s press release, the Indiana factory is expected to begin mass production of next-generation HBM and other AI memory products in the second half of 2028.On the other hand, China once accounted for about 30% of SK Hynix’s regional revenue, but its share dropped to only 24% in the third quarter.
According to the report, this situation can be attributed to two reasons. First, as SK Hynix’s Chinese customers focus on personal computers, smartphones, and IT devices that use general-purpose memory, the demand for traditional memory products has decreased, and China’s contribution to SK Hynix’s total revenue seems to be weakening.
Furthermore, it is reported that ongoing regulatory pressure from the United States on China has also led to changes in SK Hynix’s revenue structure.
SK Hynix Procures Nearly 58 Million in HBM Equipment!
Semiconductor equipment company Yest demonstrates its strength with news of supplying to SK Hynix.
According to the South Korean stock exchange on November 20th, as of 11:16 AM, Yest’s trading price was 9,160 won, up 7.76% from the previous trading day.
After continuing a sluggish performance due to concerns about a slowdown in the semiconductor industry and the “Trump shock,” Yest seems to have successfully rebounded and returned to the 10,000 won mark.
Yest announced earlier in the day that it had signed a contract to supply high-bandwidth memory (HBM) semiconductor manufacturing equipment to SK Hynix, and its stock price soared to 9,490 won.
Yest will supply electric furnaces worth 11.16 billion won (57.59 million yuan) to SK Hynix, which are key equipment in the HBM production process.
Yest’s semiconductor furnaces are equipment that use the radiated heat from heaters to remove impurities or stabilize the structure of wafers during the semiconductor manufacturing process.
Securities firms are concerned that the South Korean semiconductor industry may lose its leading position in the future.
Daol Investment & Securities researcher Ko Young-min stated, “South Korea’s leadership in the semiconductor field will be solid until 2026, when the semiconductor cycle will continue because significant technological inflection points will arrive within three years, and we must be vigilant about latecomers developing innovative technologies.”
